SI2307DS-T1 Vishay, SI2307DS-T1 Datasheet - Page 3

• Manufacturer Part Number: SI2307DS-T1
• Description: MOSFET Small Signal 30V 3.0A 1.25W
• Manufacturer: Vishay

Specifications of SI2307DS-T1

• Configuration: Single
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 70843
S-60570—Rev. A, 16-Nov-98
0.6
0.4
0.2
10
12
10
0
8
6
4
2
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 3 A
On-Resistance vs. Drain Current
= 15 V
2
2
2
V
V
DS
Q
GS
g
Output Characteristics
I
– Drain-to-Source Voltage (V)
D
– Total Gate Charge (nC)
= 10 thru 5 V
– Drain Current (A)
Gate Charge
4
4
4
V
GS
6
6
= 4.5 V
4 V
6
V
GS
= 10 V
8
8
8
3 V
10
10
10
800
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
12
10
8
6
4
2
0
0
–50
0
0
On-Resistance vs. Junction Temperature
C
V
I
D
rss
GS
= 3 A
V
T
= 10 V
1
6
DS
J
V
– Junction Temperature ( C)
GS
0
Transfer Characteristics
– Drain-to-Source Voltage (V)
C
– Gate-to-Source Voltage (V)
iss
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Capacitance
12
2
Vishay Siliconix
C
50
oss
18
3
T
C
25 C
= –55 C
Si2307DS
100
24
4
125 C
150
30
5
2-3