SI4804DY-T1 Vishay, SI4804DY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4804DY-T1
• Description: MOSFET Small Signal 30V 7.5A 2W
• Manufacturer: Vishay

Specifications of SI4804DY-T1

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 1.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?71088.
www.vishay.com
4
Si4804DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.2
−0.4
−0.6
−0.8
0.4
0.2
0.01
0.01
0.1
0.1
−50
2
1
2
1
10
10
−4
−4
Single Pulse
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
−3
50
10
I
−3
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
−2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
For related documents such as package/tape drawings, part marking, and reliability data, see
−2
10
−1
10
1
−1
50
40
30
20
10
0
10
−3
10
−2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Single Pulse Power
JM
10
− T
−1
t
1
A
Time (sec)
1
= P
t
2
DM
Z
1
thJA
thJA
100
S-50524—Rev. E, 28-Mar-05
t
t
1
2
(t)
Document Number: 71088
= 93_C/W
10
600
100
10
600