SI6923DQ-T1 Vishay, SI6923DQ-T1 Datasheet - Page 4

• Manufacturer Part Number: SI6923DQ-T1
• Description: MOSFET Small Signal 20V 3.5A 1.2W
• Manufacturer: Vishay

Specifications of SI6923DQ-T1

• Configuration: Single Dual Source
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si6923DQ
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
–0.0
–0.2
–0.4
–0.6
0.01
0.8
0.6
0.4
0.2
10
30
10
0.1
1
–50
0.00
2
1
–4
–25
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
Source-Drain Diode Forward Voltage
0.25
V
SD
0
T
– Source-to-Drain Voltage (V)
J
Threshold Voltage
T
0.50
I
= 150 C
D
J
– Temperature ( C)
= 250 A
Single Pulse
25
10
0.75
–3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
1.00
T
J
= 25 C
100
1.25
125
10
–2
Square Wave Pulse Duration (sec)
1.50
150
New Product
10
–1
0.20
0.16
0.12
0.08
0.04
40
30
20
10
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
2
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GS
Notes:
P
DM
JM
– Gate-to-Source Voltage (V)
0.1
Single Pulse Power
– T
1
A
t
1
= P
Time (sec)
4
t
2
DM
Z
thJA
(t)
t
t
thJA
1
2
1
6
=
S-56941—Rev. B, 02-Nov-98
I
D
115
Document Number: 70792
= 3.5 A
C/W
10
8
10
10
30
30