SI4416DY-T1 Vishay, SI4416DY-T1 Datasheet
SI4416DY-T1
Specifications of SI4416DY-T1
Available stocks
Related parts for SI4416DY-T1
SI4416DY-T1 Summary of contents
Page 1
... Top View Ordering Information: Si4416DY Si4416DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) a ...
Page 2
... Si4416DY Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Gate Charge ...
Page 3
... Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Document Number: 72266 S-31062—Rev. E, 26-May- 25_C J 0.8 1.0 1.2 Si4416DY Vishay Siliconix Capacitance 1800 1500 C iss 1200 900 600 C oss 300 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
Page 4
... Si4416DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 = 250 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 ...
Page 5
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...