SI4435BDY-T1 Vishay, SI4435BDY-T1 Datasheet - Page 5

• Manufacturer Part Number: SI4435BDY-T1
• Description: MOSFET Small Signal 30V 9.1A 1.5W
• Manufacturer: Vishay

Specifications of SI4435BDY-T1

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72123.
Document Number: 72123
S09-0767-Rev. D, 04-May-09
0.01
0.1
2
1
10
-4
0.02
0.05
Single Pulse
0.1
Duty Cycle = 0.5
0.2
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si4435BDY
www.vishay.com
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