SI3905DV-T1 Vishay, SI3905DV-T1 Datasheet

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SI3905DV-T1

Manufacturer Part Number
SI3905DV-T1
Description
MOSFET Small Signal 8V 2.5A
Manufacturer
Vishay
Datasheet

Specifications of SI3905DV-T1

Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.125 Ohms
Drain-source Breakdown Voltage
- 8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
+/- 2.5 A
Power Dissipation
1.15 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP-6
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3905DV-T1
Quantity:
3 000
Part Number:
SI3905DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3905DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.
Document Number: 70973
S09-2276-Rev. B, 02-Nov-09
Ordering Information: Si3905DV-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
V
3 mm
DS
- 8
(V)
G1
G2
S2
Si3905DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.125 at V
0.175 at V
0.265 at V
Top View
1
2
3
TSOP-6
2.85 mm
R
DS(on)
J
a, b
= 150 °C)
GS
GS
GS
a
6
5
4
Dual P-Channel 8-V (D-S) MOSFET
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
a, b
D1
S1
D2
a, b
A
I
± 2.5
± 2.0
± 1.7
= 25 °C, unless otherwise noted
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
J
Definition
V
V
I
P
, T
I
DM
thJA
I
thJL
DS
GS
D
S
D
stg
G
1
P-Channel MOSFET
®
Power MOSFETs: 1.8 V Rated
Typical
S
D
1
1
130
93
75
- 55 to 150
- 1.05
Limit
± 2.5
± 2.0
1.15
0.73
± 8
± 7
- 8
Maximum
G
2
110
150
90
Vishay Siliconix
P-Channel MOSFET
Si3905DV
S
D
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI3905DV-T1

SI3905DV-T1 Summary of contents

Page 1

... Top View 2.85 mm Ordering Information: Si3905DV-T1-E3 (Lead (Pb)-free) Si3905DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si3905DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... On-Resistance vs. Drain Current 2 Total Gate Charge (nC) g Gate Charge Document Number: 70973 S09-2276-Rev. B, 02-Nov- Si3905DV Vishay Siliconix ° °C 125 ° 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 600 C iss 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si3905DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70973. Document Number: 70973 S09-2276-Rev. B, 02-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3905DV Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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