SI4412ADY-T1 Vishay, SI4412ADY-T1 Datasheet

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SI4412ADY-T1

Manufacturer Part Number
SI4412ADY-T1
Description
MOSFET Small Signal 30V 8A 2.5W
Manufacturer
Vishay
Datasheet

Specifications of SI4412ADY-T1

Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.8 A
Power Dissipation
1.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4412ADY-T1-E3
Manufacturer:
Freescale
Quantity:
80
Part Number:
SI4412ADY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4412ADY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4412ADY-T1-GE3
Manufacturer:
Vishay
Quantity:
2 000
Part Number:
SI4412ADY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71105
S09-0868-Rev. C, 18-May-09
Ordering Information: Si4412ADY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
PRODUCT SUMMARY
V
DS
30
(V)
G
S
S
S
Si4412ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
0.035 at V
0.024 at V
R
Top View
SO-8
DS(on)
J
a
= 150 °C)
a
GS
GS
(Ω)
= 4.5 V
= 10 V
N-Channel 30-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
I
D
= 25 °C, unless otherwise noted
6.6
8
(A)
Steady State
Steady State
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
Symbol
Symbol
T
R
R
J
Definition
Compliant to RoHS Directive 2002/95/EC
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
®
Power MOSFETs
Typical
10 s
6.4
2.3
2.5
1.6
45
80
16
G
G
8
N-Channel MOSFET
N-Channel MOSFET
- 55 to 150
± 20
30
30
Steady State
D
S
D
S
Maximum
5.8
4.6
1.2
1.3
0.8
50
95
20
Vishay Siliconix
Si4412ADY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4412ADY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si4412ADY-T1-E3 (Lead (Pb)-free) Si4412ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4412ADY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Gate Charge 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71105 S09-0868-Rev. C, 18-May- °C J 0.8 1.0 1.2 Si4412ADY Vishay Siliconix 1200 C 1000 iss 800 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1 1.6 1.4 1.2 1 ...

Page 4

... Si4412ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0 250 µA D 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... BSC 5.80 6.20 0.25 0.50 0.50 0.93 0° 8° 0.44 0.64 Package Information Vishay Siliconix H C All Leads 0.101 mm q 0.004" INCHES Min Max 0.053 0.069 0.004 0.008 0.014 0.020 0.010 0.189 0.196 ...

Page 6

... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad ...

Page 7

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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