SI4892DY-T1 Vishay, SI4892DY-T1 Datasheet

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SI4892DY-T1

Manufacturer Part Number
SI4892DY-T1
Description
MOSFET Small Signal 30V 12.4A 1.6W
Manufacturer
Vishay
Datasheet

Specifications of SI4892DY-T1

Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.8 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4892DY-T1
Manufacturer:
SILICONIX
Quantity:
20 000
Company:
Part Number:
SI4892DY-T1
Quantity:
4 400
Part Number:
SI4892DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4892DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4892DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71407
S09-0221-Rev. G, 09-Feb-09
Ordering Information: Si4892DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Foot (Drain)
V
DS
30
(V)
G
S
S
S
Si4892DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.020 at V
0.012 at V
1
2
3
4
R
DS(on)
Top View
J
a
SO-8
= 150 °C)
GS
GS
(Ω)
= 4.5 V
= 10 V
N-Channel 30-V (D-S) MOSFET
a
8
7
6
5
a
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
D
12.4
9.6
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• High Efficiency PWM Optimized
• 100 % R
• 100 % UIS Tested
Symbol
Symbol
T
R
R
J
Available
V
V
E
I
I
P
, T
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFETs
Typical
N-Channel MOSFET
10 s
12.4
2.60
9.9
3.1
2.0
34
70
17
- 55 to 150
± 20
± 50
G
30
20
20
Steady State
Maximum
8.8
7.0
1.3
1.6
1.0
40
80
20
Vishay Siliconix
S
D
Si4892DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4892DY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si4892DY-T1-E3 (Lead (Pb)-free) Si4892DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single-Pulse Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si4892DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Gate Charge 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71407 S09-0221-Rev. G, 09-Feb- °C J 0.8 1.0 1.2 Si4892DY Vishay Siliconix 1200 1000 C iss 800 600 C oss 400 C rss 200 Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1 ...

Page 4

... Si4892DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA 0.2 D 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... BSC 5.80 6.20 0.25 0.50 0.50 0.93 0° 8° 0.44 0.64 Package Information Vishay Siliconix H C All Leads 0.101 mm q 0.004" INCHES Min Max 0.053 0.069 0.004 0.008 0.014 0.020 0.010 0.189 0.196 ...

Page 6

... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad ...

Page 7

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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