SI4501DY Vishay, SI4501DY Datasheet

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SI4501DY

Manufacturer Part Number
SI4501DY
Description
MOSFET Power 30/8V 9/6.2A
Manufacturer
Vishay
Datasheet

Specifications of SI4501DY

Configuration
Dual Common Quad Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.018 Ohms
Drain-source Breakdown Voltage
30 V, 8 V
Gate-source Breakdown Voltage
+/- 20 V, +/- 8 V
Continuous Drain Current
9 A, - 6.2 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
17 ns, 60 ns
Minimum Operating Temperature
- 55 C
Rise Time
9 ns, 50 ns
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4501DY
Manufacturer:
LT
Quantity:
7 000
Part Number:
SI4501DY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4501DY-T1-E3
Manufacturer:
VISHAY
Quantity:
2 712
Part Number:
SI4501DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4501DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70934
S-09-0658-Rev. D, 20-Apr-09
PRODUCT SUMMARY
N-Channel
P-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
Ordering Information: Si4501DY-T1
G
G
S
S
1
1
2
2
1
2
3
4
V
DS
- 8
30
(V)
Top View
Complementary MOSFET (N- and P-Channel)
SO-8
Si4501DY-T1-E3 (Lead (Pb)-free)
0.042 at V
0.060 at V
J
a, b
0.027 at V
0.018 at V
= 150 °C)
a
R
8
7
6
5
DS(on)
GS
GS
D
D
D
D
GS
GS
a, b
= - 4.5 V
= - 2.5 V
(Ω)
= 4.5 V
= 10 V
a, b
A
= 25 °C, unless otherwise noted
Steady State
Steady State
T
T
T
T
I
± 7.4
± 6.2
± 5.2
D
A
A
A
A
± 9
t ≤ 10 s
(A)
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Symbol
Symbol
T
FEATURES
R
R
J
V
V
• Compliant to RoHS Directive 2002/95/EC
I
P
, T
DM
I
I
thJA
thJC
DS
GS
D
S
D
stg
G
G
2
1
Typ.
38
73
17
N-Channel
N-Channel
S
S
± 7.4
2
1
± 20
± 30
± 9
1.7
30
Max.
50
95
22
- 55 to 150
D
2.5
1.6
Typ.
40
73
20
P-Channel
Vishay Siliconix
P-Channel
± 6.2
± 5.0
± 20
- 1.7
± 8
- 8
Si4501DY
Max.
www.vishay.com
50
95
26
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI4501DY

SI4501DY Summary of contents

Page 1

... Top View Ordering Information: Si4501DY-T1 Si4501DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS ...

Page 2

... Si4501DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge Document Number: 70934 S-09-0658-Rev. D, 20-Apr- 1800 1500 1200 = 4 Si4501DY Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 900 600 C oss 300 C rss ...

Page 4

... Si4501DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 I 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 ...

Page 5

... I - Drain Current (A) D On-Resistance vs. Drain Current Document Number: 70934 S-09-0658-Rev. D, 20-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 2 V 1 Si4501DY Vishay Siliconix - ° ° 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2500 C iss 2000 ...

Page 6

... Si4501DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 Total Gate Charge (nC) g Gate Charge 150 ° 0.00 0.25 0.50 0. Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 250 µA D 0 Temperature (°C) J Threshold Voltage www.vishay.com 6 1.50 1.25 1.00 0.75 ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70934. Document Number: 70934 S-09-0658-Rev. D, 20-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4501DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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