SI3457DV-T1 Vishay, SI3457DV-T1 Datasheet
SI3457DV-T1
Specifications of SI3457DV-T1
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SI3457DV-T1 Summary of contents
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... Notes a. Surface Mounted on FR4 Board sec. Document Number: 70644 S-56944—Rev. C, 23-Nov- (A) ( 4.3 3.4 (4) S ( P-Channel MOSFET Symbol stg Symbol R thJA Si3457DV Vishay Siliconix Limit Unit – 4.3 3 –1 1.3 –55 to 150 C Limit Unit C/W 62.5 www.vishay.com FaxBack 408-970-5600 2-1 ...
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... Si3457DV Vishay Siliconix Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... Document Number: 70644 S-56944—Rev. C, 23-Nov- 1200 1000 800 600 400 200 1.60 1.45 1.30 1.15 1.00 0.85 0 –50 Si3457DV Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 4 –25 ...
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... Si3457DV Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.25 0.50 0.75 1.00 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.60 0.45 0. 250 A D 0.15 0.00 –0.15 –0.3 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...