SUP70N06-14-E3 Vishay, SUP70N06-14-E3 Datasheet - Page 4

N CHANNEL MOSFET, 60V, 70A TO-220AB

SUP70N06-14-E3

Manufacturer Part Number
SUP70N06-14-E3
Description
N CHANNEL MOSFET, 60V, 70A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of SUP70N06-14-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
70A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / Rohs Status
YesX

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUP70N06-14-E3
Manufacturer:
FSC
Quantity:
50 000
SUP/SUB70N06-14
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
100
0.01
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0.1
0
0
- 50 - 25
2
1
0
10
-5
http://www.vishay.com/ppg?70291.
On-Resistance vs. Junction Temperature
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
V
I
Maximum Avalanche and Drain Current
D
GS
= 30 A
25
= 10 V
0
T
J
T
50
vs. Case Temperature
- Junction Temperature (°C)
C
25
- Case Temperature (°C)
Single Pulse
75
10
50
-4
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
150
150
10
-3
Square Wave Pulse Duration (s)
175
175
500
100
10
100
0.1
10
10
1
-2
1
0.1
0.25
* V
Limited
by r
GS
Source-Drain Diode Forward Voltage
DS(on)*
T
> minimum V
C
0.50
V
T
Single Pulse
= 150 °C
V
DS
C
SD
Safe Operating Area
= 25 °C
- Drain-to-Source Voltage (V)
- Source-to-Drain Voltage (V)
1
10
0.75
-1
GS
at which r
S-80107-Rev. D, 21-Jan-08
1.00
Document Number: 70291
DS(on)
T
10
C
= 25 °C
is specified
1.25
1
100 µs
1 ms
10 ms
100 ms,
1 s, DC
100
1.50
3

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