MAX3378EEUD Maxim Integrated Products, MAX3378EEUD Datasheet - Page 14

• Manufacturer Part Number: MAX3378EEUD
• Description: Voltage Level Translator 14-Pin TSSOP
• Manufacturer: Maxim Integrated Products

Specifications of MAX3378EEUD

• Package: 14TSSOP
• Logic Function: Voltage Level Translator
• Output Type: 3-State
• Operating Supply Voltage: 1.8/3.3 V

±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Figure 4a. IEC 1000-4-2 ESD Test Model
To reduce ripple and the chance of transmitting incor-
rect data, bypass V
capacitor. See the Typical Operating Circuit. To ensure
full ±15kV ESD protection, bypass V
1µF capacitor. Place all capacitors as close to the
power-supply inputs as possible.
The MAX3373E–MAX3376E, MAX3378E/MAX3379E
and MAX3390E–MAX3393E level-shift the data present
on the I/O lines between +1.2V and +5.5V, making
them ideal for level translation between a low-voltage
14
VOLTAGE
SOURCE
HIGH-
______________________________________________________________________________________
DC
+1.8V
CHARGE-CURRENT-
R
LIMIT RESISTOR
C
50MΩ to 100MΩ
0.1μF
Applications Information
150pF
C s
L
and V
Power-Supply Decoupling
STORAGE
CAPACITOR
R
RESISTANCE
DISCHARGE
D
330Ω
I
CC
2
C Level Translation
CONTROLLER
SYSTEM
to ground with a 0.1µF
+1.8V
CC
to ground with a
DATA
DEVICE-
UNDER-
TEST
THREE-STATE
I/O V
MAX3378E–MAX3383E
L_
V
L
V
CC
ASIC and an I
interfacing a low-voltage microprocessor to a 3V or 5V
D/A converter, such as the MAX517.
All devices in the MAX3372E–MAX3379E and
MAX3390E–MAX3393E family may be driven in a push-
pull configuration. The MAX3373E–MAX3376E/
MAX3378E/MAX3379E and MAX3390E–MAX3393E
include internal 10kΩ resistors that pull up I/O V
I/O V
operation of the I/O lines with open-drain devices. See
the Timing Characteristics table for maximum data rates
when using open-drain drivers.
Figure 4b. IEC 1000-4-2 ESD Generator Current Waveform
I/O V
t r = 0.7ns to 1ns
CC_
CC_
100%
to their respective power supplies, allowing
90%
10%
I
DATA
Push-Pull vs. Open-Drain Driving
2
C device. A typical application involves
Typical Operating Circuit
SYSTEM
+3.3V
30ns
60ns
0.1μF
1μF
+3.3V
L_
t
and