HN1B01FU-GR Toshiba Flat Panel/Mass Storage, HN1B01FU-GR Datasheet
Home Discrete Semiconductor Products BJT - General Purpose HN1B01FU-GR
Manufacturer Part Number
HN1B01FU-GR
Description
Trans GP BJT NPN/PNP 50V 0.15A 6-Pin US
Manufacturer
Toshiba Flat Panel/Mass Storage
Specifications of HN1B01FU-GR
Package
6US
Supplier Package
US
Pin Count
6
Minimum Dc Current Gain
200@2mA@6V
Maximum Operating Frequency
150(Typ)@NPN|120(Typ)@PNP MHz
Maximum Dc Collector Current
0.15 A
Maximum Collector Emitter Saturation Voltage
0.25@10mA@100mA@NPN|0.3@10mA@100mA@PNP V
Maximum Collector Base Voltage
60@NPN|50@PNP V
Maximum Collector Emitter Voltage
50 V
Maximum Emitter Base Voltage
5 V
Available stocks
Audio Frequency General Purpose Amplifier Applications
Q1:
Q2:
Q1 Absolute Maximum Ratings
Q2 Absolute Maximum Ratings
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
High voltage and high current
High h
Excellent h
High voltage and high current
High h
Excellent h
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
FE
FE
: V
: h
: V
: h
: h
: h
Characteristic
Characteristic
FE
FE
FE
FE
FE
FE
CEO
CEO
linearity
linearity
= 120~400
(I
= 120~400
(I
= −50V, I
C
= 50V, I
C
= −0.1mA) / h
= 0.1mA) / h
C
C
= 150mA (max)
= −150mA (max)
FE
FE
(I
(I
C
C
Symbol
Symbol
HN1B01FU
= 2mA) = 0.95 (typ.)
V
V
V
V
V
V
= −2mA) = 0.95 (typ.)
CBO
CEO
EBO
CBO
CEO
EBO
I
I
I
I
C
B
C
B
(Ta = 25°C)
(Ta = 25°C)
Rating
Rating
−150
−50
−50
−30
150
−5
60
50
30
5
1
Unit
Unit
mA
mA
mA
mA
V
V
V
V
V
V
Equivalent Circuit
JEDEC
JEITA
TOSHIBA
Weight: 6.8 mg (typ.)
Marking
2-2J1A
HN1B01FU
―
―
(Top View)
2007-11-01
Unit in mm
Related parts for HN1B01FU-GR
HN1B01FU-GR Summary of contents
... Rating Unit V −50 CBO V −50 CEO V −5 EBO I −150 C I −30 B (Ta = 25°C) Symbol Rating Unit V 60 CBO V 50 CEO V 5 EBO I 150 HN1B01FU ― JEDEC JEITA ― 2-2J1A TOSHIBA Weight: 6.8 mg (typ.) Marking Equivalent Circuit (Top View 2007-11-01 Unit in mm ...
... I = 2mA FE (Note ― 100mA 10mA CE (sat ― 10V 1mA 10V ― 1MHz 2 HN1B01FU Min Typ. Max Unit μA ― ― −0.1 μA ― ― −0.1 120 ― 400 ― −0.1 −0.3 V ― 120 ― MHz ― 4 ― pF Min Typ. Max Unit μ ...
... Q1 (PNP transistor) 3 HN1B01FU 2007-11-01 ...
... Q2 (NPN transistor) 4 HN1B01FU 2007-11-01 ...
... Q2 Common) 5 HN1B01FU 2007-11-01 ...
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 HN1B01FU 2007-11-01 ...
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