UPC 2726T-E3 Renesas Electronics America, UPC 2726T-E3 Datasheet - Page 3

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UPC 2726T-E3

Manufacturer Part Number
UPC 2726T-E3
Description
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPC 2726T-E3

Lead Free Status / Rohs Status
Supplier Unconfirmed
Document No. P10873EJ3V0DS00 (3rd edition)
Date Published July 2001 N CP(K)
Printed in Japan
DESCRIPTION
This IC operates up to 1.6 GHz and therefore is suitable for BS tuner, mobile communication and measurement
equipment applications. This IC can also use as differential oscillator application.
nitride passivation film and gold electrodes. These materials can protect the chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
• Circuit current
• Power gain
• Saturated output power gain
• High isolation
• Upper limit operating frequency : f
ORDERING INFORMATION
µ PC2726T-E3
The µ PC2726T is a silicon microwave monolithic integrated circuit designed for miniature differenctial amplifier.
This IC is manufactured using NEC’s 20 GHz f
Remark
1.6 GHz SILICON MMIC DIFFERENTIAL WIDE BAND AMPLIFIER
Part Number
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: µ PC2726T
6-pin minimold
: ISL = 60 dB TYP. @f = 400 MHz
: V
: I
: G
: P
Caution Electro-static sensitive devices
BIPOLAR ANALOG INTEGRATED CIRCUIT
CC
u
CC
O(sat)
P
= 1.6 GHz TYP. @3 dB down below from gain at f = 400 MHz
The mark
= 15.0 dB TYP. @f = 400 MHz
= 11.5 mA TYP. @V
Package
= 4.5 to 5.5 V
DATA SHEET
= −2.0 dBm @f = 400 MHz
T
shows major revised points.
NESAT
TM
CC
• Embossed tape 8 mm wide
• 1, 2, 3 pin face the perforation side of the tape
• Qty 3 kpcs/reel
III silicon bipolar process. This process uses silicon
= 5.0 V
Supplying Form
µ µ µ µ PC2726T
©
1994, 2001

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