IRF7301 International Rectifier, IRF7301 Datasheet - Page 2

• Manufacturer Part Number: IRF7301
• Description: 16F6380
• Manufacturer: International Rectifier

Specifications of IRF7301

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 500mV
• Rohs Compliant: No

Electrical Characteristics @ T
IRF7301
Source-Drain Ratings and Characteristics
Notes:
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
R
I
L
L
GSS
d(on)
d(off)
S
SM
on
DSS
r
f
rr
V
fs
D
S
(BR)DSS
GS(th)
SD
DS(ON)
g
gs
gd
iss
oss
rss
rr
(BR)DSS
Repetitive rating; pulse width limited by
I
T
max. junction temperature. ( See fig. 11 )
SD
J
150°C
2.6A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Internal Source Inductance
100A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
Pulse width
Min. Typ. Max. Units
0.70
Min. Typ. Max. Units
––– 0.044 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Surface mounted on FR-4 board, t
–––
–––
–––
8.3
20
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
––– 0.050
––– 0.070
–––
–––
–––
–––
–––
–––
–––
280
140
–––
––– -100
–––
4.0
660
–––
9.0
6.0
–––
42
32
51
29
22
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
1.0
2.2
8.0
1.0
2.5
25
20
44
33
300µs; duty cycle
21
V/°C
nH
µA
nA
ns
nC
pF
nC
ns
A
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
R
R
Between lead tip
and center of die contact
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
I
V
T
di/dt = 100A/µs
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= 2.6A
= 2.6A
= 25°C, I
= 25°C, I
= 3.8
= 6.0
= V
= 15V, I
= 16V, V
= 16V, V
= 16V
= 15V
= 0V, I
= 4.5V, I
= 2.7V, I
= 12V
= - 12V
= 4.5V, See Fig. 6 and 12
= 10V
= 0V
2%.
GS
, I
D
See Fig. 10
10sec.
S
F
D
D
Conditions
D
D
= 250µA
GS
GS
Conditions
= 2.6A
= 1.8A, V
= 250µA
= 2.6A
= 2.6A
= 2.2A
= 0V
= 0V, T
D
= 1mA
GS
J
G
= 125 °C
= 0V
G
S
+L
D
S
D
)
S
D