NCP3170AGEVB ON Semiconductor, NCP3170AGEVB Datasheet - Page 7

• Manufacturer Part Number: NCP3170AGEVB
• Description: BOARD EVALUATION NCP3170ADR2G
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NCP3170AGEVB

• Design Resources: NCP3170 Schematic NCP3170AGEVB BOM
• Main Purpose: DC/DC, Step Down
• Outputs And Type: 1, Non-Isolated
• Power - Output: -
• Voltage - Output: Adj down to 0.8V
• Current - Output: 3A
• Voltage - Input: 4.5 ~ 18 V
• Regulator Topology: Buck
• Frequency - Switching: 500kHz
• Board Type: Fully Populated
• Utilized Ic / Part: NCP3170
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NCP3170AGEVBOS

130
120
100
215
210
205
200
195
190
185
180
110
90
80
70
60
−50
−50
Figure 17. Transconductance vs. Temperature
−30
−30
Figure 15. High Side MOSFET R
Input Voltage = 12 V
Input Voltage = 18 V
Input Voltage = 4.5 V
−10
−10
(Circuit from Figure 1, TA = 25°C, V
10
TEMPERATURE (°C)
TEMPERATURE (°C)
10
Temperature
30
30
4.45
4.40
4.35
4.30
4.25
4.20
4.15
4.10
4.05
Input Voltage = 12 V, 18 V
Input Voltage = 4.5 V
TYPICAL PERFORMANCE CHARACTERISTICS
50
50
−50
Figure 19. Input Under Voltage Protection vs.
Input Under Voltage Protection Rising
Input Under Voltage Protection Falling
−30
70
70
DS(on)
90
90
−10
110
IN
vs.
110
http://onsemi.com
10
TEMPERATURE (°C)
= V
Temperature
EN
130
130
30
= 12 V, V
7
1001.5
1001.0
1000.5
1000.0
999.5
999.0
998.5
998.0
997.5
997.0
996.5
50
40
35
30
25
20
15
OUT
−50
−50
70
= 3.3 V unless otherwise specified)
Input Voltage = 4.5 V
−30
−30
Figure 16. Low Side MOSFET R
Figure 18. Over Voltage Protection vs.
90
Input Voltage = 4.5 V
−10
−10
110
10
TEMPERATURE (°C)
TEMPERATURE (°C)
10
130
Temperature
Temperature
30
30
Input Voltage = 12 V, 18 V
Input Voltage = 12 V
50
50
Input Voltage = 18 V
70
70
DS(on)
90
90
vs.
110
110
130
130