SI3226-C-FQR Silicon Laboratories Inc, SI3226-C-FQR Datasheet - Page 10
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SI3226-C-FQR
Manufacturer Part Number
SI3226-C-FQR
Description
Manufacturer
Silicon Laboratories Inc
Datasheet
1.SI3226-C-FQR.pdf
(38 pages)
Specifications of SI3226-C-FQR
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3226-C-FQR
Manufacturer:
VISHAY
Quantity:
7 623
Part Number:
SI3226-C-FQR
Manufacturer:
SILICONLABS/芯科
Quantity:
20 000
Table 8. DC Characteristics
(V
Si3208/9
10
Table 9. Switching Characteristics—General Inputs
(V
High Level Input Voltage
Low Level Input Voltage
High Level Output
Voltage
Low Level Output
Voltage
SDITHRU internal pullup
resistance
Relay Driver Source
Impedance
Relay Driver Sink
Impedance
Input Leakage Current
Rise Time, RESET
RESET Pulse Width, GCI Mode
RESET Pulse Width, SPI Daisy Chain Mode
Notes:
DD
DD
1. All timing (except Rise and Fall time) is referenced to the 50% level of the waveform. Input test levels are
2. The minimum RESET pulse width assumes the SDITHRU pin is tied to ground via a pulldown resistor no greater than
3. The minimum RESET pulse width is 33/PCLK frequency (i.e. 33/8.192 MHz = 4 µs).
= 3.13 to 3.47 V, T
= 3.13 to 5.25 V, T
Parameter
V
10 kΩ per device.
IH
= V
DD
– 0.4 V, V
Parameter
A
A
= 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade)
= 0 to 70 °C for F-Grade, –40 to 85 °C for G-Grade, C
IL
Symbol
= 0.4 V. Rise and Fall times are referenced to the 20% and 80% levels of the waveform.
R
V
V
R
V
V
OUT
I
OH
OL
L
IH
IN
IL
2,3
GPIO1 a/b, GPIO2 a/b:
V
V
DD1
DD1
3
DTX, SDO, INT,
Test Condition
Preliminary Rev. 0.33
I
IO < 28 mA
IO < 85 mA
I
O
SDITHRU:
–V
–V
I
O
O
= –40 mA
= –4 mA
DD4
DD4
= 4 mA
Symbol
= 3.13 V
= 3.13 V
t
t
t
rl
rl
r
1
33/PCLK
33/PCLK
Min
—
0.7 x V
V
L
DD
= 20 pF)
Min
35
—
—
—
—
—
—
– 0.6
DD
Typ
—
—
—
Typ
50
63
—
—
—
—
—
11
—
Max
—
—
0.3 x V
5
Max
5.25
0.72
0.4
10
—
—
—
—
DD
Unit
ns
µs
µs
Unit
kΩ
µA
Ω
Ω
V
V
V
V