DMC2020USD-13 Diodes Inc, DMC2020USD-13 Datasheet - Page 4

• Manufacturer Part Number: DMC2020USD-13
• Description: MOSFET DUAL COMPL PAIR 8SO
• Manufacturer: Diodes Inc
• Series: -r

Specifications of DMC2020USD-13

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.5A, 5.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1149pF @ 10V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMC2020USD-13DITR

Electrical Characteristics – Q1 N-CHANNEL
Typical Characteristics – Q1 N-CHANNEL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transfer Admittance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Continuous Source Current
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Notes:
DMC2020USD
Document number: DS32121 Rev. 4 - 2
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
30
25
20
15
10
5
0
0
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
Characteristic
V
GS
V
0.5
GS
V
= 2.5V
GS
V
= 3.0V
GS
V
= 3.5V
GS
= 4.0V
V
= 4.5V
GS
= 10V
1
V
V
GS
GS
1.5
= 2.0V
= 1.8V
Symbol
R
2
BV
V
www.diodes.com
DS (ON)
t
t
I
I
C
|Y
V
C
C
GS(th)
Q
Q
D(on)
D(off)
GSS
DSS
Q
Q
R
I
oss
t
t
SD
rss
DSS
S
iss
fs
gs
gd
r
f
g
g
g
|
4 of 11
@T
A
Min
0.5
20
= 25°C unless otherwise specified
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
15
10
11.67
12.49
35.89
12.33
1149
1.51
11.6
Typ
5
0
157
142
1.1
0.7
6.0
2.7
3.4
13
18
16
-
-
-
-
0
V
Fig. 2 Typical Transfer Characteristics
0.5
DS
V
Max
±10
1.0
1.5
1.2
1.8
20
28
GS
Diodes Incorporated
-
-
-
-
-
-
-
-
-
-
-
-
-
-
= 5V
, GATE SOURCE VOLTAGE (V)
A Product Line of
T = 85°C
A
1
T = 125°C
A
Unit
T = 150°C
mΩ
nC
μA
μA
pF
ns
A
V
V
S
V
A
Ω
1.5
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
V
R
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
GS
GS
G
= 6Ω
T = -55°C
= 0V, I
= 20V, V
= ±10V, V
= V
= 4.5V, I
= 2.5V, I
= 5V, I
= 0V, I
= 10V, V
= 0V, V
= 2.5V
= 4.5V
= 4.5V, V
A
T = 25°C
2
A
GS
DMC2020USD
Test Condition
,
, I
I
D
D
S
D
GS
D
= 9.4A
= 1.3A
= 250μA
D
D
= 1A
GS
GS
DS
= 250μA
2.5
DS
= 7A
= 3A
= 0V, f = 1MHz
-
= 0V
= 0V,
© Diodes Incorporated
V
I
= 10V,
= 0V
D
DS
February 2011
= 9.4A
= 10V
3