DMC4050SSD-13 Diodes Zetex, DMC4050SSD-13 Datasheet - Page 7

• Manufacturer Part Number: DMC4050SSD-13
• Description: MOSFET N/P-CH 40V 4.2A SO8
• Manufacturer: Diodes Zetex
• Series: -r

Specifications of DMC4050SSD-13

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 37.56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1790.8pF @ 20V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMC4050SSD-13TR

Electrical Characteristics P-CHANNEL
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMC4050SSD
Document number: DS33310 Rev. 2 - 2
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
30
25
20
15
10
5
0
0
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristic
Characteristic
DS
0.5
J
= 25°C
1
1.5
@T
Symbol
R
2
BV
V
www.diodes.com
DS (ON)
t
t
I
I
|Y
C
V
C
C
Q
GS(th)
Q
D(on)
D(off)
GSS
A
DSS
R
Q
t
SD
oss
t
rss
DSS
iss
gd
fs
gs
r
f
= 25°C unless otherwise specified
g
g
|
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Min
-0.8
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1643.17
179.13
127.82
30
25
20
15
10
33.66
14.72
53.65
30.86
16.6
6.43
5.54
7.30
6.85
Typ
-1.3
-0.7
5
0
28
30
-
-
-
0
V
DS
±100
-V
Fig. 14 Typical Transfer Characteristic
Max
-1.0
-1.8
-1.0
= -5V
45
60
Diodes Incorporated
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
1
, GATE-SOURCE VOLTAGE (V)
A Product Line of
Unit
mΩ
nC
nC
nC
μA
nA
pF
pF
pF
Ω
ns
ns
ns
ns
V
V
S
V
2
T = -55°C
A
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
I
T = 25°C
D
D
T = 85°C
A
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
GS
A
= -3A
= -3A
3
= 0V, I
= -40V, V
= ±20V, V
= V
= -10V, I
= -4.5V, I
= -5V, I
= 0V, I
= -20V, V
= 0V, V
= -10V, V
= -10V, V
GS
Test Condition
DMC4050SSD
, I
D
S
D
GS
D
= -1A
= -250μA
D
= -3A
D
GS
GS
4
= -250μA
DS
DS
T = 125°C
DS
= -3A
= 0V, f = 1MHz
A
= -3A
T = 150°C
© Diodes Incorporated
A
= 0V
= 0V,
= -20V,
= -20V,
= 0V
March 2011
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