ECH8653-TL-H ON Semiconductor, ECH8653-TL-H Datasheet - Page 2

• Manufacturer Part Number: ECH8653-TL-H
• Description: MOSFET N-CH DUAL 20V 7.5A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8653-TL-H

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 4A, 8V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 18.5nC @ 8V
• Input Capacitance (ciss) @ Vds: 1280pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7011A-003
Switching Time Test Circuit
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
8V
0V
PW=10µs
D.C.≤1%
V IN
1
8
0.65
Parameter
Bottom View
Top View
V IN
2.9
50Ω
G
5
4
0.3
V DD =10V
D
S
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
0.15
I D =4A
R L =2.5Ω
ECH8653
R DS (on)1
R DS (on)2
V OUT
Symbol
0 to 0.02
t d (on)
t d (off)
Coss
Ciss
Crss
V SD
Qgs
Qgd
Qg
t r
t f
I D =4A, V GS =8V
I D =4A, V GS =4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =8V, I D =7.5A
V DS =10V, V GS =8V, I D =7.5A
V DS =10V, V GS =8V, I D =7.5A
I S =7.5A, V GS =0V
ECH8653
Electrical Connection
Conditions
8
1
7
2
6
3
5
4
min
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
11
9
Ratings
typ
1280
18.5
0.82
170
105
2.7
3.1
14
18
13
48
94
36
max
1.2
No. A0851-2/4
20
25
Unit
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V