EMH2407-TL-H ON Semiconductor, EMH2407-TL-H Datasheet - Page 2

• Manufacturer Part Number: EMH2407-TL-H
• Description: MOSFET N-CH DUAL 20V 6A EMH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of EMH2407-TL-H

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 6.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 580pF @ 10V
• Power - Max: 1.4W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7045-006
Switching Time Test Circuit
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
4.5V
1
0V
8
PW=10μs
D.C.≤1%
0.5
0.2
V IN
2.0
Parameter
V IN
4
5
G
50Ω
R g =2kΩ
R g
V DD =10V
D
S
I D =3A
R L =3.33Ω
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : EMH8
EMH2407
0.125
R DS (on)1
R DS (on)2
R DS (on)3
Symbol
V OUT
t d (on)
t d (off)
Coss
Ciss
Crss
V SD
Qgs
Qgd
Qg
t r
t f
I D =3A, V GS =4.5V
I D =3A, V GS =4V
I D =1.5A, V GS =2.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =4.5V, I D =6A
V DS =10V, V GS =4.5V, I D =6A
V DS =10V, V GS =4.5V, I D =6A
I S =6A, V GS =0V
EMH2407
Conditions
Electrical Connection
8
1
7
2
6
3
min
13
14
16
5
4
Ratings
typ
1020
3000
2250
0.83
0.78
580
310
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
6.3
1.9
19
20
28
95
75
max
1.2
No. A1141-2/4
25
26
39
Unit
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V