ECH8661-TL-H ON Semiconductor, ECH8661-TL-H Datasheet - Page 2
ECH8661-TL-H
Manufacturer Part Number
ECH8661-TL-H
Description
MOSFET N/P-CH 30V 7A ECH8
Manufacturer
ON Semiconductor
Series
-r
Datasheet
1.ECH8661-TL-H.pdf
(6 pages)
Specifications of ECH8661-TL-H
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A, 5.5A
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
11.8nC @ 10V
Input Capacitance (ciss) @ Vds
710pF @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SMD
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ECH8661-TL-H
Manufacturer:
ON
Quantity:
1 000
Part Number:
ECH8661-TL-H
Manufacturer:
ON/安森美
Quantity:
20 000
Electrical Characteristics at Ta=25°C
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Parameter
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
V (BR)DSS
I DSS
I GSS
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS =±16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =3.5A
I D =3.5A, V GS =10V
I D =2A, V GS =4.5V
I D =2A, V GS =4V
I D =--1mA, V GS =0V
V DS =--30V, V GS =0V
V GS =±16V, V DS =0V
V DS =--10V, I D =--1mA
V DS =--10V, I D =--2.5A
I D =--2.5A, V GS =--10V
I D =--1.5A, V GS =--4.5V
I D =--1.5A, V GS =--4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =15V, V GS =10V, I D =7A
V DS =15V, V GS =10V, I D =7A
V DS =15V, V GS =10V, I D =7A
I S =7A, V GS =0V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--15V, V GS =--10V, I D =--5.5A
V DS =--15V, V GS =--10V, I D =--5.5A
V DS =--15V, V GS =--10V, I D =--5.5A
I S =--5.5A, V GS =0V
ECH8661
Conditions
min
--1.2
--30
1.2
30
Ratings
typ
--0.82
11.8
0.79
600
145
110
710
120
3.7
2.4
2.0
5.2
7.2
1.8
3.2
18
29
39
72
30
55
58
23
63
42
13
10
25
43
25
max
--2.6
--1.2
±10
±10
2.6
1.2
24
41
55
--1
39
77
82
No. A1777-2/6
1
Unit
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
S
S
V
V
V
V
V
V