NVMFD5877NLT1G ON Semiconductor, NVMFD5877NLT1G Datasheet - Page 2

• Manufacturer Part Number: NVMFD5877NLT1G
• Description: MOSFET N-CH 60V 17A 8SOIC
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NVMFD5877NLT1G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 540pF @ 25V
• Power - Max: 3.2W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
Parameter
V
V
(T
V
(BR)DSS
Symbol
V
GS(TH)
Q
Q
R
Q
(BR)DSS
J
GS(TH)
t
t
t
t
I
I
C
G(TOT)
Q
Q
G(TOT)
Q
DS(on)
C
V
C
g
d(on)
d(off)
d(on)
d(off)
DSS
GSS
G(TH)
t
R
L
L
L
= 25°C unless otherwise specified)
RR
t
t
FS
oss
t
t
t
t
SD
rss
GS
GD
RR
iss
a
b
D
G
r
f
r
f
S
G
/T
/T
J
J
V
V
GS
http://onsemi.com
GS
V
V
= 0 V, f = 1.0 MHz, V
V
V
V
V
GS
V
V
V
V
V
= 10 V, V
I
GS
V
DS
GS
GS
GS
S
I
I
GS
V
GS
GS
DS
GS
D
D
GS
DS
= 5.0 A
= 0 V, d
= 5.0 A, R
= 5.0 A, R
= 4.5 V
= 60 V
Test Condition
= 10 V
= 4.5 V, V
= 4.5 V, V
= 0 V,
= 10 V, V
= 0 V,
= 0 V, V
= V
= 0 V, I
= 15 V, I
2
T
I
I
D
S
A
DS
DS
= 5.0 A
= 5.0 A
= 25°C
IS
, I
/d
D
= 48V, I
GS
D
G
DS
G
DS
DS
t
D
= 250 mA
= 250 mA
= 100 A/ms,
= 2.5 W
= 2.5 W
= 5.0 A
= ±20 V
= 48 V,
= 48 V,
= 48 V,
T
T
T
T
I
I
DS
D
J
D
D
J
J
J
= 125°C
= 5.0A
= 125°C
= 7.5 A
= 7.5 A
= 25°C
= 25°C
= 25 V
Min
1.0
60
0.005
0.62
1.64
2.80
15.8
14.5
14.5
0.93
1.84
11.8
11.5
Typ
540
3.5
7.0
5.9
8.1
3.9
4.9
6.4
2.4
0.8
0.7
3.1
1.5
53
31
42
55
36
11
11
±100
Max
1.0
3.0
1.2
10
39
60
20
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
nC
nH
ns
ns
ns
W
V
V
S
V