FW707-TL-E ON Semiconductor, FW707-TL-E Datasheet

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... Drain Current (PW≤10μs) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Package Dimensions unit : mm (typ) 7005A-003 5 1.27 0.43 FW707 SANYO Semiconductors Symbol Conditions V DSS V GSS Duty cycle≤ Duty cycle≤ Duty cycle≤ When mounted on ceramic substrate (2000mm ...

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... See specifi ed Test Circuit See specifi ed Test Circuit (off) See specifi ed Test Circuit See specifi ed Test Circuit =--15V =--10V =--8A Qgs V DS =--15V =--10V =--8A Qgd V DS =--15V =--10V =-- =--8A =0V V OUT FW707 -- --10V --14 --12 --10 --8 --6 --4 --2 0 --0.7 --0.8 --0.9 --1.0 0 ...

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... Gate-to-Source Voltage 1 0 --0.01 --0.1 --1.0 Drain Current Time -- 100 --0.1 --1.0 Drain Current -- --15V -- --8A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge FW707 70 Ta=25° --12 --14 --16 --60 --40 --20 IT15807 --10V --1 --0 --0. --0.2 --10 IT15809 --15V --10V 1000 100 --10 IT15811 --100 -- --1.0 7 ...

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... Ambient Temperature °C Note on usage : Since the FW707 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...