IRFB812PBF International Rectifier, IRFB812PBF Datasheet - Page 5

• Manufacturer Part Number: IRFB812PBF
• Description: MOSFET Power Gen 10.7 FredFet 500V 1.5Ohm
• Manufacturer: International Rectifier

Specifications of IRFB812PBF

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 78 W
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Gate Charge Qg: 13.3 nC
• Lead Free Status / Rohs Status: Details

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0.001
0.01
0.1
Fig 9. Maximum Drain Current Vs.
10
4
3
2
1
0
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Case Temperature
0.20
0.10
0.05
0.02
0.01
50
T C , CaseTemperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
125
t 1 , Rectangular Pulse Duration (sec)
0.0001
150
3.0
2.5
2.0
1.5
Fig 9. Typical Rdson Vs. Drain Current
0
0.001
1
I D , Drain Current (A)
2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V GS = 20V
3
0.01
4
V GS = 10V
5
6
5
7
0.1