AUIRLR3114Z International Rectifier, AUIRLR3114Z Datasheet - Page 7

• Manufacturer Part Number: AUIRLR3114Z
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRLR3114Z

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 130 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Gate Charge Qg: 40 nC
• Lead Free Status / Rohs Status: Details

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Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
V
G
I
AS
1K
Q
GS
R G
20V
V
V DS
GS
t p
t p
Q
Charge
Q
DUT
GD
G
I AS
D.U.T
0.01 Ω
L
L
V
(BR)DSS
15V
VCC
DRIVER
+
-
V DD
A
600
500
400
300
200
100
3.0
2.5
2.0
1.5
1.0
0.5
Fig 14. Threshold Voltage vs. Temperature
0
-75 -50 -25 0
25
Fig 12c. Maximum Avalanche Energy
I D = 150μA
I D = 250μA
I D = 1.0mA
I D = 1.0A
Starting T J , Junction Temperature (°C)
50
T J , Temperature ( °C )
vs. Drain Current
75
25 50 75 100 125 150 175 200
100
TOP
BOTTOM 42A
125
150
I D
9.7A
17A
175
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