AUIRF2903ZS International Rectifier, AUIRF2903ZS Datasheet

AUIRF2903ZS

Manufacturer Part Number

AUIRF2903ZS

Description

MOSFET Power

Manufacturer

International Rectifier

Datasheet

1.AUIRF2903ZSTRR.pdf (14 pages)

Specifications of AUIRF2903ZS

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

235 A

Power Dissipation

231 W

Mounting Style

SMD/SMT

Package / Case

D2PAK

Gate Charge Qg

160 nC

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRF2903ZS

Manufacturer:

Quantity:

12 500

Current page: 1 of 14
Download datasheet (230Kb)

Specifically designed for Automotive applications, this

HEXFET

techniques to achieve extremely low on-resistance per silicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating . These features combine to make

this design an extremely efficient and reliable device for use in

Automotive applications and a wide variety of other applications.

Absolute Maximum Ratings

specifications is not implied.

HEXFET

*Qualification standards can be found at http://www.irf.com/

www.irf.com

Features

Description

Thermal Resistance

STG

@ T

Advanced Process Technology

Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(Tested )

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest processing

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

functional operation of the device at these or any other condition beyond those indicated in the

Parameter

@ 10V

AUTOMOTIVE GRADE

(Silicon Limited)

(Package Limited)

Gate

AUIRF2903ZS

Typ.

–––

See Fig.12a, 12b, 15, 16

300 (1.6mm from case )

Pak

-55 to + 175

HEXFET

235

166

160

Max.

1020

1.54

231

± 20

231

820

Drain

D (Silicon Limited)

D (Package Limited)

(BR)DSS

DS(on)

Max.

0.65

AUIRF2903ZS

AUIRF2903ZL

Power MOSFET

typ.

max.

AUIRF2903ZL

TO-262

Source

PD - 96380

235A

1.9m

2.4m

160A

Units

30V

W/°C

°C/W

°C

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