PSMN9R0-25YLC,115 NXP Semiconductors, PSMN9R0-25YLC,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN9R0-25YLC,115
• Description: MOSFET Power N-chnl25V9.1m logic lvl MOSFET in LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9.1 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 34 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 12 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 10 ns
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN9R0-25YLC
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN9R0-25YLC
Symbol
V
V
V
I
I
P
T
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
ESD
DS(AL)S
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
electrostatic discharge voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
source
source
source
gate
mounting base; connected to drain
LFPAK; Power-SO8
Package
Name
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
All information provided in this document is subject to legal disclaimers.
Description
plastic single-ended surface-mounted package; 4 leads
Rev. 2 — 1 November 2011
T
MM (JEDEC JESD22-A115)
Conditions
25 °C ≤ T
25 °C ≤ T
V
V
pulsed; t
see
T
pulsed; t
V
V
see
mb
mb
GS
GS
GS
sup
Figure 4
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 25 V; unclamped; R
Simplified outline
SOT669 (LFPAK; Power-SO8)
p
p
j
j
≤ 10 µs; T
≤ 10 µs; T
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
= 25 °C; see
= 100 °C; see
Figure 2
= 25 °C; I
1 2 3 4
mb
mb
mb
GS
= 25 °C;
= 25 °C
= 20 kΩ
GS
D
= 46 A;
= 50 Ω;
Figure 1
PSMN9R0-25YLC
Figure 1
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
140
-
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
SOT669
175
175
-
Version
Max
25
25
20
46
32
183
34
260
31
183
10
D
S
Unit
V
V
V
A
A
A
W
°C
°C
°C
V
A
A
mJ
2 of 15