MRFE6VP8600HR5 Freescale Semiconductor, MRFE6VP8600HR5 Datasheet - Page 2

• Manufacturer Part Number: MRFE6VP8600HR5
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP8600HR5

• Lead Free Status / Rohs Status: Compliant

2
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz.
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Forward Transconductance
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
3. Performance with thermal grease TIM (thermal interface material) will typically degrade by 0.05°C/W due to the increased thermal contact
4. Each side of device measured separately.
5. Measurement made with device in push--pull configuration.
6. Part internally input matched.
7. Die capacitance value without internal matching.
Case Temperature 74°C, 125 W CW, 50 V, 1400 mA, 860 MHz
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes -- AN1955.
resistance of this TIM.
GS
GS
DS
DS
DS
DD
GS
DS
DS
DS
DS
= 5 Vdc, V
= 0 Vdc, I
= 50 Vdc, V
= 100 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
(5)
D
DS
D
D
D
D
(7)
(4)
= 100 mA)
(In Freescale Narrowband Test Fixture, 50 ohm system) V
GS
GS
= 980 μAdc)
= 1400 mAdc, Measured in Functional Test)
= 2 Adc)
= 20 Adc)
(6)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
(4)
(5)
(4)
(4)
Characteristic
(6)
Test Methodology
Characteristic
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
Symbol
V
V
V
V
DD
ACPR
I
I
I
C
DS(on)
C
(BR)DSS
GS(th)
GS(Q)
C
G
IRL
GSS
DSS
DSS
g
η
oss
rss
iss
fs
= 50 Vdc, I
ps
D
DQ
18.0
29.0
Min
130
1.5
2.1
—
—
—
—
—
—
—
—
—
—
= 1400 mA, P
Symbol
R
θJC
--60.5
2.07
2.65
0.24
15.6
1.49
79.9
19.3
30.0
Typ
140
264
--12
—
—
—
2 (2001--4000 V)
out
B (201--400 V)
IV (>1000 V)
Value
Freescale Semiconductor
= 125 W Avg., f = 860 MHz,
0.19
Class
(1,2)
(3)
--58.5
Max
21.0
2.5
3.1
20
—
—
—
—
—
—
—
--9
1
5
RF Device Data
(continued)
°C/W
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dB
dB
pF
pF
pF
%
S