MRFE6VP8600HR6 Freescale Semiconductor, MRFE6VP8600HR6 Datasheet - Page 12

• Manufacturer Part Number: MRFE6VP8600HR6
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6VP8600HR6

• Lead Free Status / Rohs Status: Compliant

12
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
TYPICAL CHARACTERISTICS — 470- -860 MHz REFERENCE CIRCUIT
Figure 18. DVB- -T (8k OFDM) Drain Efficiency, Power Gain and
35
30
25
20
15
10
21
20
19
18
17
16
15
14
13
21
20
19
18
17
16
15
(1) Intermodulation distortion shoulder measurement made using
Figure 16. Broadband Pulsed Power Gain and Drain
5
400
IMD Shoulder versus Output Power — 470- -860 MHz
10
0
Efficiency versus Output Power — 470- -860 MHz
Figure 17. Broadband Pulsed Power Gain, Drain
665 MHz
V
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
V
Pulse Width = 100 μsec
Duty Cycle = 10%
delta marker at 4.2 MHz offset from center frequency.
DD
DD
470 MHz
V
Pulse Width = 100 μsec, Duty Cycle = 10%
450
η
DD
= 50 Vdc, I
= 50 Vdc, I
D
Efficiency and IRL versus Frequency
= 50 Vdc, P
500
40
P
G
P
860 MHz
out
470 MHz
out
ps
665 MHz
DQ
, OUTPUT POWER (WATTS) PULSED
DQ
, OUTPUT POWER (WATTS) AVG.
550
= 1400 mA
out
= 1400 mA
G
η
f, FREQUENCY (MHz)
= 600 W Peak, I
ps
D
600
80
IRL
650
100
860 MHz
470 MHz
DQ
120
700
= 1400 mA
IMD
G
860 MHz
η
ps
860 MHz
D
(1)
750
665 MHz
160
800
860 MHz
470 MHz
665 MHz
665 MHz
470 MHz
850
1000
200
900
--5
--10
--15
--20
--25
--30
--35
66
62
58
54
50
46
42
38
34
60
50
40
30
20
10
0
--5
--7
--6
--11
--13
Freescale Semiconductor
RF Device Data