2N5154JV SEMICOA, 2N5154JV Datasheet - Page 2

• Manufacturer Part Number: 2N5154JV
• Manufacturer: SEMICOA

Specifications of 2N5154JV

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5.5V
• Collector Current (dc) (max): 2A
• Power Dissipation: 1W
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-39
• Lead Free Status / Rohs Status: Supplier Unconfirmed

ELECTRICAL CHARACTERISTICS
Copyright© 20 10
Rev. D-2b
Off Characteristics
Collector-Emitter Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
DC Current Gain
Base-Emitter Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Switching Characteristics
Storage Time
Fall Time
Saturated Turn-On Time
Saturated Turn-Off Time
Parameter
Parameter
Parameter
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
Symbol
Symbol
Symbol
V
V
V
V
V
I
I
C
(BR)CEO
I
I
I
I
h
h
h
h
V
|h
t
EBO1
EBO2
CES1
CES2
BEsat1
BEsat2
CEsat1
CEsat2
h
t
CEO
CEX
OFF
OBO
ON
FE1
FE2
FE3
FE4
t
t
FE
FE
BE
s
f
|
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Semicoa Corporation
I
V
V
T
V
V
V
V
I
I
I
I
T
V
I
I
I
I
V
f = 10 MHz
V
f = 1 kHz
V
f = 1 MHz
I
V
C
C
C
C
C
C
C
C
C
C
A
A
CE
CE
CE
CE
EB
EB
CE
CE
CE
CB
BEoff
= 100 mA
= 50 mA, V
= 2.5 A, V
= 5 A, V
= 2.5 A, V
= 2.5 A, I
= 5 A, I
= 2.5 A, I
= 5 A, I
= 5 A, I
= 150°C
= -55°C
= 40 Volts
= 60 Volts, V
= 60 Volts
= 100 Volts
= 4 Volts
= 5.5 Volts
= 5 Volts, I
= 5 Volts, I
= 5 Volts, I
= 10 Volts, I
Test Conditions
Test Conditions
Test Conditions
= 3.7 Volts, R
B
B
B1
CE
= 500 mA
= 500 mA
B
B
=I
CE
CE
= 5 Volts
= 250 mA
= 250 mA
CE
B2
= 5 Volts
= 5 Volts
C
C
C
= 500 mA,
= 5 Volts
E
= 2.5 A
= 500 mA,
= 100 mA,
EB
= 0 mA,
L
= 2 Volts,
= 6 Ω
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Min
Min
Min
80
50
70
40
25
50
7
characteristics specified at T
Silicon NPN Transistor
Typ
Typ
Typ
2N5154
Max
Max
Max
1.45
1.45
2.20
0.75
1.50
100
200
250
1.4
0.5
0.5
1.5
50
D a ta S h e e t
1
1
1
1
Page 2 of 2
A
Units
Units
Units
Volts
Volts
Volts
Volts
= 25°C
mA
mA
µA
µA
µA
µA
pF
µs