IRFR9120N International Rectifier, IRFR9120N Datasheet - Page 2

• Manufacturer Part Number: IRFR9120N
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRFR9120N

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.48Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 6.6A
• Power Dissipation: 40W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Not Compliant

IRFR/U9120N
Source-Drain Ratings and Characteristics
Notes:
Electrical Characteristics @ T
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
I
I
V
t
Q
t
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
SM
on
DSS
GSS
S
rr
d(on)
r
d(off)
f
V
fs
S
SD
D
rr
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
Starting T
gd
Repetitive rating; pulse width limited by
g
gs
R
T
I
max. junction temperature. ( See fig. 11 )
(BR)DSS
SD
J
For recommended footprint and soldering techniques refer to application note #AN-994
G
= 25 , I
150°C
-4.0A, di/dt
/ T
J
J
= 25°C, L = 13mH
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
AS
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
= -3.9A. (See Figure 12)
300A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
lead and center of die contact
This is applied for I-PAK, L
-100
Pulse width
Uses IRF9520N data and test conditions.
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
1.4
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
-0.11 –––
–––
–––
–––
420
100
–––
–––
–––
–––
––– -250
–––
––– -100
–––
–––
–––
350
110
––– 0.48
4.5
14
28
31
47
7.5
70
-1.6
630
–––
-6.6
150
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
-26
-25
5.0
300µs; duty cycle
27
15
V/°C
nC
µA
nA
ns
ns
nC
nH
pF
V
A
V
V
S
S
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
D
D
of D-PAK is measured between
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -4.0A
= -4.0A
= 25°C, I
= 25°C, I
=
=12
= V
= -80V, V
= 0V, I
= -10V, I
= -50V, I
= -100V, V
= 20V
= -80V
= -10V, See Fig. 6 and 13
= 0V
= -25V
= -20V
= -50V
2%.
GS
, I
See Fig. 10
F
D
S
D
Conditions
= -4.0A
= -3.9A, V
= -250µA
D
D
GS
Conditions
= -250µA
= -3.9A
= -4.0A
GS
= 0V, T
= 0V
D
= -1mA
GS
J
G
= 150°C
= 0V
G
S
+L
D
D
S
)
S
D