M25P20-VMN3TPB Micron Technology Inc, M25P20-VMN3TPB Datasheet - Page 53

• Manufacturer Part Number: M25P20-VMN3TPB
• Manufacturer: Micron Technology Inc

Specifications of M25P20-VMN3TPB

• Cell Type: NOR
• Density: 2Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 125C
• Package Type: SO N
• Program/erase Volt (typ): 2.3 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Automotive
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256K
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Compliant

Table 28.
8-March-2010
01-Dec-2005
22-Dec-2005
10-Dec-2008
14-Apr-2006
05-Jun-2006
12-Oct-2008
14-Oct-2009
Date
Document revision history (continued)
Revision
7.0
8.0
10
12
13
14
11
9
50MHz operation added (see
Operation, Device Grade
removed from under
Information
package mechanical drawing updated (see package silhouette
and
Package No lead, 6x5mm, Package
26. and
t
Operation, Device Grade
The data contained in
preliminary data.
Figure 3: Bus Master and memory devices on the SPI Bus
Note 2
40MHz frequency condition modified for I
Characteristics (Device Grade
Table 17: Instruction Times (Device Grade 3)
Device Grade distinction removed, Condition changed for the Data
Retention parameter in
V
and VWI
SO8 package specifications updated (see
/X
t
the “X” process technology in
SO8 Narrow package specifications updated (see
Table
Applied Numonyx branding.
Changed frequency up to 75MHz (only in the standard Vcc range).
Added new package.
Added UID/CFD protection.
Extended Vcc range to 2.3 V.
Created separate order information for standard parts and automotive
parts.
Minor text edits.
Made the following changes:
Created Icc1, Grade 6 and Grade 3 and Icc2, Grade 6 and Grade 3 in
Table 13.: DC Characteristics (Device Grade
Removed tPP, tSE, and tBE in
technology T7Y, Device Grade
RES1
RES1
WI
Process
parameter for Device Grade 3 added to
Figure 28: VFQFPN8 (MLP8) 8-lead Very thin Fine Pitch Dual Flat
and t
and t
23).
added.
Figure 28 Read Identification (RDID)
Threshold.
RES2
RES2
added to
Scheme. MLP package renamed as VFQFPN, silhouette and
modified in
parameter timings changed for devices produced with
Plating Technology
Table 26: Ordering Information
Table
Table 11: Data Retention and
6)). All packages are ECOPACK®. Blank option
6). Titles of
Table 21: AC Characteristics (50MHz
11,
Table 21: AC Characteristics (50MHz
Table 19
3).
Table 16.: Instruction Times, process
6.
Changes
Table 17
Outline. Note added to <Blue>Figure
Figure 28
and
in
CC3
and
Figure 26
Table 26: Ordering
Table
Table 8: Power-Up Timing
6).
instruction added.
in
shows preliminary data.
Table 19
and
Table 14: DC
20.
Figure 26
Table 25
Scheme.
and
Endurance.
is no longer
Table
modified and
and
corrected.
on page 1
23).
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