S3M-13-F Diodes Zetex, S3M-13-F Datasheet - Page 2

• Manufacturer Part Number: S3M-13-F
• Manufacturer: Diodes Zetex

Specifications of S3M-13-F

• Rectifier Type: Switching Diode
• Configuration: Single
• Peak Rep Rev Volt: 1000V
• Avg. Forward Curr (max): 3A
• Rev Curr: 10uA
• Peak Non-repetitive Surge Current (max): 100A
• Forward Voltage: 1.15V
• Operating Temp Range: -65C to 150C
• Package Type: SMC
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / Rohs Status: Compliant

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Typical Thermal Resistance Junction to Terminal
Operating and Storage Temperature Range
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Total Capacitance (Note 5)
Notes:
S3A/B - S3M/B
Document number: DS16005 Rev. 14 - 2
3.0
2.5
1.5
2.0
1.0
0.5
4. Thermal resistance: Junction to Terminal, unit mounted on PC board with 5.0 mm
5. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
0
25
Fig. 1 Forward Current Derating Curve
T , TERMINAL TEMPERATURE (ºC)
T
50
Characteristic
Characteristic
Characteristic
@T
A
75
= 25°C unless otherwise specified
@T
100
@ T
@ T
@ T
A
@ I
= 25°C unless otherwise specified
A
A
= 125 °C
T
F
= 25°C
= 75°C
(Note 4)
= 3.0A
125
150
Symbol
Symbol
T
Symbol
V
www.diodes.com
V
V
J,
R(RMS)
I
R
V
I
RWM
V
FSM
C
RRM
RM
I
T
θ JT
O
FM
R
T
STG
2 of 4
A/AB
S3
50
30
0.01
1.0
B/BB
0.1
10
2
100
S3
70
(0.013 mm thick) copper pad as heat sink.
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
D/DB
200
140
S3
Fig. 2 Typical Forward Characteristics
0.4
-65 to +150
Value
Value
G/GB
1.15
400
280
100
250
3.0
S3
10
10
40
0.8
J/JB
600
420
S3
I Pulse Width = 300 S
1.2
F
K/KB
S3A/B - S3M/B
800
560
S3
1.6
M/MB
© Diodes Incorporated
1000
September 2010
700
S3
μ
2.0
°C/W
Unit
Unit
Unit
µA
°C
pF
V
V
A
A
V