AL9910S-13 Diodes Zetex, AL9910S-13 Datasheet - Page 4

• Manufacturer Part Number: AL9910S-13
• Manufacturer: Diodes Zetex

Specifications of AL9910S-13

• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics
Specifications apply to AL9910, AL9910A and AL9910-5 unless otherwise specified
Notes:
AL9910/AL9910A/AL9910-5
Document number: DS 35103 Rev. 3 - 2
V
V
Symbol
R
∆UVLO
I
D
V
t
t
UVLO
GATE(hi)
GATE(lo)
DD(ext)
BLANK
DELAY
T
PWM_D
t
t
f
I
V
T
CS(hi)
MAXhf
V
RISE
FALL
OSC
θ
θ
Insd
SDH
DD
SD
JC
LD
JA
5. V
6. Also limited by package power dissipation limit, whichever is lower.
7. Device mounted on FR-4 PCB (25mm x 25mm 1oz copper, minimum recommended pad layout on top. For better thermal performance, larger
8. Device mounted on FR-4 PCB (51mm x 51mm 2oz copper, minimum recommended pad layout on top layer and thermal vias to bottom layer
ground plane. For better thermal performance, larger copper pad for heat-sink is needed.
Shut-down mode supply current
Internally regulated voltage
V
circuitry
V
threshold
V
hysteresis
PWM_D pull-down resistance
Current sense threshold voltage
GATE high output voltage
GATE low output voltage
Oscillator frequency
Maximum Oscillator PWM Duty
Cycle
Linear Dimming pin voltage range T
Current sense blanking interval
Delay from CS trip to GATE lo
GATE output rise time
GATE output fall time
Thermal shut down
Thermal shut down hysteresis
Thermal Resistance Junction-to-
Ambient
Thermal Resistance Junction-to-
Case
copper pad for heat-sink is needed.
IN(Min)
DD
DD
DD
under voltage lockout
current available for external
under voltage lockout
for the AL9910 is 15V and for the AL9910A it is 20V
Parameter
(Over recommended operating conditions unless otherwise specified - T
Pin PWM_D to GND,
V
V
l
V
V
V
V
T
I
I
R
R
f
CS to GND.
V
V
V
C
C
SO-8 (Note 7)
SO-8EP (Note 8)
SO-8 (Note 7)
SO-8EP (Note 8)
DD(ext)
PWMhf
OUT
OUT
IN
IN
IN
DD
DD
PWM_D
A
A
CS
IN
CS
OSC
OSC
GATE
GATE
UNIVERSAL HIGH VOLTAGE HIGH BRIGHTNESS LED
= -40°C to +85°C
= <85°C, V
= V
= V
= V
= 20V, V
= 0 to 0.22V after T
rising
falling
= 0.45V, V
= 10mA
= -10mA
=0, Gate pin open
= 1MΩ
= 226kΩ
= 25kHz, at GATE,
IN(Min)
= 500pF
= 500pF
IN(Min)
IN(Min)
= 5V
www.diodes.com
LD
~500V, (Note 5)
to 100V (Note 5 & 6)
(Note 5)
4 of 15
IN
= 0.15,
AL9910/AL9910A/AL9910-5
Conditions
LD
= 20V
= V
DD
BLANK
AL9910
AL9910A
AL9910
AL9910A
AL9910
AL9910A
AL9910
AL9910A
AL9910/A
AL9910-5
V
237.5
DD
Min
150
225
160
7.0
9.5
6.4
8.4
20
80
0
0
-0.3
Typ.
0.50
0.65
500
750
200
250
250
100
250
150
110
7.5
6.7
10
30
30
50
66
22
25
9
9
-
© Diodes Incorporated
262.5
Max
10.5
V
250
275
120
100
250
440
300
A
1.2
8.0
1.0
9.6
0.3
50
50
30
1
7
DD
= 25°C)
June 2011
DRIVER
°C/W
°C/W
Unit
kHz
mA
mA
mV
mV
mV
kΩ
ns
ns
ns
ns
°C
%
V
V
V
V