PK25GB80 Sanrex Corp., PK25GB80 Datasheet

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PK25GB80

Manufacturer Part Number
PK25GB80
Description
800V Thyristor module
Manufacturer
Sanrex Corp.
Datasheet

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(Applications)
Power Thyristor/Diode Module PK25GB series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 800V are available. and electrically isolated mounting base make
your mechanical design easy.
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
■Maximum Ratings
■Electrical Characteristics
*mark:Thyristor and Diode part. No mark:Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
I
Rth ( j-c)*Thermal Impedance, max.
Symbol
Symbol
Symbol
GT
dv/dt
I
I
di/dt 100 A/μs
dv/dt 500V/μs
P
di/dt
T ( RMS)
T(AV)
V
V
V
I
V
V
Tstg
P
I
V
I
I
T ( AV)
I
V
V
G (AV)
FGM
DRM
RRM
/V
TSM
tgt
RGM
RRM
RSM
DRM
I
FGM
Tj
I
I
GM
ISO
THYRISTOR MODULE
PK
TM
GD
2
H
L
t
25A, I
GT
*Repetitive Peak Reverse Voltage
*Non-Repetitive Peak Reverse Voltage
*Average On-State Current
*R.M.S. On-State Current
*Surge On-State Current
*I
*Isolation Breakdown Voltage (R.M.S.)
*Operating Junction Temperature
*Storage Temperature
*Repetitive Peak Reverse Current, max.
*Peak On-State Voltage, max.
T(RMS)
Mounting
Torque
Repetitive Peak Off-State Voltage
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Rsverse)
Critical Rate of Rise of On-State Current
Repetitive Peak Off-State Current, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Lutching Current, typ.
2
t
Mass
( PD,PE,KK )
39A, I
TSM
Item
Item
Item
Mounting (M5)
Terminal(M5)
500A
Internal Configurations
A1K2
A1K2
Single phase, half wave, 180° conduction, Tc:97℃
Single phase, half wave, 180° conduction, Tc:97℃
1
Value for one cycle of surge current
I
A.C.1minute
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.5-2.5(15-25)
at V
at V
On-State Current 75A, Tj=125℃ Inst. measurement
Tj=25℃,I
Tj=125℃,V
I
Tj=125℃, V
Tj=25℃
Tj=25℃
Junction to case
3
3
T
G
=25A, I
25GB
2
=100mA, Tj=25℃, V
cycle, 50Hz/60Hz, peak Value, non-repetitive
PK25GB40 PD25GB40
KK25GB40 PE25GB40
DRM
DRM
(K2)
(K2)
2
2
PK
PD
G
, single phase, half wave, Tj=125℃
, single phase, half wave, Tj=125℃
=100mA, Tj=25℃, V
(A2)
(A2)
1
1
K1
K1
T
=1A,V
G2
G1
D
K2
G1
K2
D
400
480
400
2
1
3
V
2
Conditions
Conditions
(A1)
V
A1K2
DRM
3
1
DRM
D
D
=6V
, Exponential wave.
(K2)
1
2
D
2
2
PE
KK
V
DRM
1
(A2)
2
(A2)
V
1
Ratings
, dI
DRM
1
K1
K1
G2
K2
G2
K2
G1
G
, dI
/dt=0.1A/ μs
G
/dt=0.1A/ μs
PK25GB80 PD25GB80
KK25GB80 PE25GB80
800
960
800
16.5
~
−40 to +125
−40 to +125
3
4.7(48)
2.7(28)
450/500
23
93.5MAX
Ratings
Ratings
+
1000
2500
50/3
0.25
1.50
0.80
80
100
170
2
500
100
25
39
10
10
50
10
23
1
3
5
4
4
1
UL;E76102 ( M)
3-M5
(㎏f・B)
110TAB
Unit:
A/ μs
mA/V
℃/W
V/ μs
2- 6.5
N・m
Unit
Unit
Unit
A
mA
mA
μs
mA
mA
W
W
A
A
A
A
V
V
V
V
V
V
g
V
V
2
S
A

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PK25GB80 Summary of contents

Page 1

... Tj=125℃ Exponential wave. D DRM 3 Tj=25℃ Tj=25℃ Junction to case UL;E76102 ( M) 93.5MAX – 16 3-M5 PK25GB80 PD25GB80 KK25GB80 PE25GB80 800 960 800 Ratings 25 39 450/500 1000 /dt=0.1A/ μs 100 G 2500 −40 to +125 −40 to +125 4.7(48) 2.7(28) ...

Page 2

Gate Characteristics 2 Peak Forward Gate Voltage (10V) 1 1 0 5 2 0 1 0 5 125℃ 25℃ −30℃ 2 Maximum Gate Voltage that will not trigger any unit (0.25V) − 1 1 0 1 0 1 2 5 ...

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