PDMB150B12C Nihon Inter Electronics (NIEC), PDMB150B12C Datasheet
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PDMB150B12C
Manufacturer Part Number
PDMB150B12C
Description
IGBT MODULE Dual 150A 1200V
Manufacturer
Nihon Inter Electronics (NIEC)
Datasheet
1.PDMB150B12C.pdf
(3 pages)
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PDMB150B12C
Manufacturer:
NIEC
Quantity:
37
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Part Number:
PDMB150B12C
Manufacturer:
HITACHI
Quantity:
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Part Number:
PDMB150B12C
Quantity:
60
Company:
Part Number:
PDMB150B12C2
Manufacturer:
SANREX
Quantity:
1 000
Part Number:
PDMB150B12C2
Quantity:
60
IGBT
□ 回 路 図 :
□ 最 大 定 格 :
□ 電 気 的 特 性 :
□フリーホイーリングダイオードの 特 性:
□ 熱 的 特 性 :
(C2E1)
1
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コ レ ク タ 電 流
Collector Current
コ レ ク タ 損 失
Collector Power Dissipation
接
Junction Temperature Range
保
Storage Temperature Range
絶
Isolation Voltage
締 め 付 け ト ル ク
Mounting Torque
コ レ ク タ 遮 断 電 流
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
入
Input Capacitance
スイッチング時間
Switching Time
順
Forward Current
順
Peak Forward Voltage
逆 回 復 時 間
Reverse Recovery Time
熱
Thermal Impedance
縁
力
合
存
電
抵
電
(E2)
耐
容
2
CIRCUIT
温
温
Module-Dual
Characteristic
Characteristic
Characteristic
圧
抗
MAXIMUM RATINGS
圧(Terminal to Base AC,1minute)
量
流
ELECTRICAL CHARACTERISTICS
THERMAL CHARACTERISTICS
度
度
Module Base to Heatsink
Busbar to Main Terminal
上 昇 時 間 Rise
ターンオン時間 Turn-on Time
下 降 時 間 Fall
ターンオフ時間 Turn-off Time
Item
Item
(C1)
3
7(G2)
4(G1)
6(E2)
5(E1)
FREE WHEELING DIODE RATINGS & CHARACTERISTICS
IGBT
1ms
1ms
Diode
DC
DC
□ 外 形 寸 法 図 :
(T
Time
Time
3-M6
150 A,1200V
C
=25℃)
日本インター株式会社
Symbol
Symbol
Symbol
Symbol
Symbol
V
Rth(j-c)
V
16
14
CE(sat)
V
V
T
V
F
I
I
C
t
GE(th)
1
I
t
I
t
I
P
T
t
t
I
V
CES
GES
stg
ISO
tor
CES
GES
ies
off
CP
on
FM
rr
PDMB150B12C
C
C
j
r
f
F
F
11
25
9
LABEL
93
108
16
14
OUTLINE DRAWING
2
± 0 .2 5
(T
11
V
V
I
V
V
V
R
R
V
I
I
di/dt= 300A/μs
Junction to Case
25
9
C
Test Condition
Test Condition
Test Condition
CE
GE
C
CE
CE
CC
L
G
GE
F
F
= 4Ω
= 3.6Ω
=25℃)
= 150A,V
= 150A,V
= 150A,V
PDMB150B12C
16
14
= 1200V,V
= ±20V,V
= 5V,I
= 10V,V
= 600V
= ±15V
3
24
C
7
6
5
4
GE
GE
GE
= 150mA
GE
GE
CE
= 15V
= 0V
= -10V
= 0V,f= 1MH
= 0V
= 0V
4-Ø 6.5
3(30.6)
Rated Value
Rated Value
-40~+150
-40~+125
1,200
2,500
3(30.6)
PDMB150B12C
PDMB150B12C2
Z
3-M5
±20
150
300
730
150
300
Min.
Min.
Min.
PDMB150B12C2 2(20.4)
4.0
12.0
14
1
-
-
-
-
-
-
-
-
-
-
-
-
PDMB150B12C2
23.0
11.0
9
LABEL
94.0
80
QS043-401M0060 (2/4)
12.0
14
2
±0.25
Typ.
0.25
0.40
0.25
0.80
Typ.
Typ.
12,600
1.9
1.9
0.2
23.0
11.0
-
-
-
-
-
9
12.0
14
3
17.0
(T
Max.
0.45
0.70
0.35
1.10
Max.
Max.
0.16
0.32
3.0
1.0
2.4
8.0
2.4
0.3
-
7
6
5
4
C
Dimension:[mm]
=25℃)
4-fasten tab
#110 t=0.5
2-Ø6.5
Unit
(kgf・cm)
Unit
Unit
Unit
Unit
V
N・m
℃/W
mA
μA
pF
μs
μs
(RMS)
V
V
A
W
℃
℃
V
V
A
V
Related parts for PDMB150B12C
PDMB150B12C Summary of contents
Page 1
... PDMB150B12C2 2(20.4) Min. Typ. Max - ...
Page 2
Fig.1- Output Characteristics 300 V =20V GE 12V 15V 250 200 150 100 Collector to Emitter Voltage V Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage 16 I =75A C ...
Page 3
Fig.7- Series Gate Impedance vs. Switching Time 10 V =600V CC I =150A =±15V GE T =25℃ 0.5 0.2 0.1 0. Series Gate Impedance R Fig.9- Reverse Recovery ...