APT40M70JVR Advanced Power Technology, APT40M70JVR Datasheet

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APT40M70JVR

Manufacturer Part Number
APT40M70JVR
Description
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer
Advanced Power Technology
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT40M70JVR
Manufacturer:
MSC
Quantity:
1 240
Part Number:
APT40M70JVR
Manufacturer:
APT
Quantity:
25
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
I
V
E
E
DS(on)
D(on)
GS(th)
I
,T
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
1
(Repetitive and Non-Repetitive)
2
(V
DS
C
DS
APT Website - http://www.advancedpower.com
1
= V
C
= 25 C
• Popular SOT-227 Package
• 100% Avalanche Tested
= 25 C
> I
4
GS
GS
D(on)
2
DS
DS
, I
GS
= 30V, V
Bend, Oregon 97702-1035
F-33700 Merignac - France
D
(V
= V
= 0.8 V
x R
= 0V, I
= 2.5mA)
GS
DSS
DS(on)
= 10V, 0.5 I
, V
DSS
D
DS
= 250 A)
GS
Max, V
= 0V)
®
, V
= 0V)
GS
D[Cont.]
= 0V, T
GS
All Ratings: T
= 10V)
)
C
= 125 C)
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
400V 53A 0.070
APT40M70JVR
C
®
= 25 C unless otherwise specified.
MIN
400
53
2
APT40M70JVR
-55 to 150
ISOTOP
2500
TYP
400
212
450
300
3.6
G
53
53
50
30
40
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
®
0.070
MAX
250
25
100
"UL Recognized"
4
D
S
Amps
Watts
Amps
Amps
Ohms
UNIT
W/ C
UNIT
Volts
Volts
Volts
Volts
mJ
nA
C
A

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APT40M70JVR Summary of contents

Page 1

... 2.5mA APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France APT40M70JVR 400V 53A 0.070 ® "UL Recognized" ISOTOP ® unless otherwise specified. C APT40M70JVR 400 53 212 30 40 450 3.6 -55 to 150 300 53 50 2500 MIN TYP MAX 400 53 0.070 25 = 125 C) 250 ...

Page 2

... G (Body Diode 0V D[Cont /dt = 100A D[Cont /dt = 100A D[Cont See MIL-STD-750 Method 3471 4 Starting 1.78mH RECTANGULAR PULSE DURATION (SECONDS) APT40M70JVR MIN TYP MAX 7410 8890 1140 1600 450 675 330 495 40 60 DSS 127 190 DSS MIN TYP MAX 53 212 1.3 540 11 ...

Page 3

... APT40M70JVR 100 V GS =6V, 7V, 10V & 15V 100 150 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 - + +125 > (ON (ON)MAX. 60 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE +125 + - GATE-TO-SOURCE VOLTAGE (VOLTS) GS FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 100 T , CASE TEMPERATURE ( C) C FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2 ...

Page 4

... H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) 5,045,903 5,089,434 5,182,234 5,256,583 4,748,103 5,283,202 5,231,474 APT40M70JVR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150 =+25 C 0.4 0.8 1.2 1.6 2.0 , SOURCE-TO-DRAIN VOLTAGE (VOLTS ...

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