PWB200AA40 Sanrex Corp., PWB200AA40 Datasheet
PWB200AA40
Manufacturer Part Number
PWB200AA40
Description
Three Phase Thyristor Module(half Bridge)
Manufacturer
Sanrex Corp.
Datasheet
1.PWB200AA40.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PWB200AA40
Manufacturer:
MITSUBISHI
Quantity:
57
Company:
Part Number:
PWB200AA40
Manufacturer:
SANREX
Quantity:
334
Part Number:
PWB200AA40
Manufacturer:
SANREX
Quantity:
20 000
(Applications)
PWB200AA is a Thyristor module suitable for low voltage, 3 phase recifier applications.
Welding power Supply
Various DC power Supply
■Maximum Ratings
■Electrical Characteristics
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
●
●
●
●
Rth ( j-c) Thermal Impedance, max.
Symbol
Symbol
Symbol
I
I
high Surge Current 6000 A(60Hz)
Easy Construction
Non-isolated. Mounting base as common Anode terminal
P
dv/dt
T ( RMS)
T ( AV)
V
V
V
I
V
V
di/dt
Tstg
P
I
I
I
T ( AV)
I
V
V
V
G (AV)
FGM
DRM
RRM
TSM
I
tgt
RGM
RRM
RSM
DRM
I
FGM
Tj
I
GT
GM
THYRISTOR MODULE
PWB200AA
TM
GD
2
GT
H
t
200A(each device)
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
I
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
Operating Junction Temperature
Storage Temperature
Mounting
torque
Mass
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current, max.
Gate Trigger Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
2
t
Item
Item
Item
Mounting(M6)
Terminal(M6)
Single phase, half wave, 180° conduction, Tc:121℃
Single phase, half wave, 180° conduction, Tc:121℃
1
I
Recommended Value 2.5-3.9(25-40)
Recommended Value 2.5-3.9(25-40)
at V
at V
On-State Current 630A, Tj=25℃Inst. measurement
Tj=25℃,I
Tj=25℃,I
Tj=150℃,V
I
V
Tj=150℃,V
Tj=25℃
Junction to case(
/
G
T
2
D
=200mA, Tj=25℃, V
=200A, I
cycle, 50Hz/60Hz, peak value, non-reqetitive
=
DRM
DRM
1
/
2
V
, Single phase, half wave, Tj=150℃
, Single phase, half wave, Tj=150℃
DRM
PWB200AA30
G
T
T
, dI
=200mA, Tj=25℃,
=1A,V
=1A,V
D
D
300
360
300
=
=
G3
G
/dt=1A/ μs
1
2
/
/
K3
2
3
Conditions
Conditions
3
1
V
/
V
K3
DRM
3
DRM
D
D
D
Module)
=
=6V
=6V
1
/
,Exponential wave.
2
2
K2
A
V
DRM
, dI
Ratings
1
K1
G
K2
/dt=1A/ μs
K1
G2
G1
PWB200AA40
20.5
400
480
400
18
3
−40 to +150
−40 to +125
NAME PLATE
26
5400/6000
93±0.3
4.7(48)
4.7(48)
1499400
Ratings
Ratings
108
2
1.20
0.25
0.12
150
200
200
314
280
60
60
70
26
10
10
10
50
2
1
3
5
1
6-♯110TAB
(㎏f・B)
3-M6
Unit:A
2- φ6.5
A/ μs
℃/W
V/ μs
N・m
Unit
Unit
Unit
A
mA
mA
mA
μs
mA
℃
℃
W
W
A
A
A
A
V
V
V
V
V
g
V
V
V
2
S
Related parts for PWB200AA40
PWB200AA40 Summary of contents
Page 1
... Tj=25℃ 1 Junction to case( / Module) 3 108 93±0 3-M6 20 6-♯110TAB G2 NAME PLATE G1 Unit:A PWB200AA40 400 480 400 Ratings 200 314 5400/6000 1499400 −40 to +150 −40 to +125 4.7(48) (㎏f・B) 4.7(48) 280 ...
Page 2
Gate Characteristics 2 Peak Forward Gate Voltag (10V) 1 0 1 5 2 1 0 25℃ −30℃ 150℃ 5 2 Maximum Gate Voltage that will not terigger any unit 1 0 1 2 5 1 0 2 2 5 Gate ...