IRLML6401 International Rectifier Corp., IRLML6401 Datasheet

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IRLML6401

Manufacturer Part Number
IRLML6401
Description
Manufacturer
International Rectifier Corp.
Datasheet
l
l
l
l
l
l
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These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Thermal Resistance
V
I
I
I
P
P
E
V
T
R
www.irf.com
D
D
DM
AS
GS
J,
DS
D
D
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
1.8V Gate Rated
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
power MOSFETs are well known for, provides
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambientƒ
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
G 1
S
2
Typ.
75
HEXFET Power MOSFET
-55 to + 150
3
D
Max.
± 8.0
0.01
-4.3
-3.4
-12
-34
1.3
0.8
33
Micro3
R
Max.
DS(on)
V
100
DSS
= -12V
= 0.05Ω
Units
Units
W/°C
mJ
°C
V
A
V
1
04/29/03

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IRLML6401 Summary of contents

Page 1

Ultra Low On-Resistance l l P-Channel MOSFET SOT-23 Footprint l l Low Profile (<1.1mm) Available in Tape and Reel l Fast Switching l l 1.8V Gate Rated These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 25° 150°C 10.0 1 -12V ...

Page 4

0V MHZ C iss = rss = C gd 1000 C oss = Ciss 800 600 400 Coss Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

Page 6

Id = -4.3A 0.04 0.03 0.02 1.0 2.0 3.0 4.0 -V GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 0.8 0.7 0.6 0.5 0.4 0.3 -75 Fig ...

Page 7

0.10 (.004 NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. ...

Page 8

... DAT E CODE EXAMPLES: YWW = 9503 = 5C YWW = 9532 = EF Notes : T his part marking information applies to devices produced after 02/26/2001 PART NUMBER PART NUMBER CODE REFERENCE IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR Y 2001 1 2002 2 2003 ...

Page 9

TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD ...

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