DS1315E Maxim Integrated Products, DS1315E Datasheet

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DS1315E

Manufacturer Part Number
DS1315E
Description
Manufacturer
Maxim Integrated Products
Datasheet

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Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device
may be simultaneously available through various sales channels. For information about device errata, click here: www.maxim-ic.com/errata.
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DESCRIPTION
The
combination of a CMOS timekeeper and a
nonvolatile memory controller. In the absence of
power,
timekeeping operation and provides power for a
CMOS static RAM. The watch keeps track of
hundredths of seconds, seconds, minutes, hours,
day, date, month, and year information. The last
day of the month is automatically adjusted for
months with less than 31 days, including leap
year correction. The watch operates in one of two
formats: a 12-hour mode with an AM/PM
indicator or a 24-hour mode. The nonvolatile
controller supplies all the necessary support
circuitry to convert a CMOS RAM to a
nonvolatile memory. The DS1315 can be
interfaced with either RAM or ROM without
leaving gaps in memory.
PIN CONFIGURATIONS
Pin Configurations continued at end of data sheet.
www.dalsemi.com
BAT1
GND
GND
WE
X1
X2
DS1315
D
Q
an
1
2
3
4
5
6
7
8
16-Pin DIP (300-mil)
external
Phantom
battery maintains
Time
16
15
14
12
11
10
13
9
V
V
BAT2
RST
ROM/RAM
Chip
OE
CEI
CEO
CC1
CC0
is
the
a
1 of 21
FEATURES
§ Real time clock keeps track of hundredths of
§ Adjusts for months with fewer than 31 days
§ Automatic leap year correction valid up to
§ No address space required to communicate
§ Provides nonvolatile controller functions for
§ Supports redundant battery attachment for
§ Full ±10% V
§ +3.3 volt or +5 volt operation
§ Industrial (–45°C to +85°C) operating
§ Drop in replacement for DS1215
PIN DESCRIPTION
X1, X2
BAT1
GND
D
Q
ROM/
BAT2
V
V
WE
CEO
CEI
OE
RST
CC0
CC1
seconds, seconds, minutes, hours, days, date
of the month, months, and years
2100
with RTC
battery backup of SRAM
high–reliability applications
temperature ranges available
RAM
Phantom Time Chip
- 32.768 kHz Crystal Connection
- Write Enable
- Battery 1 Input
- Ground
- Data Input
- Data Output
- ROM/RAM Mode Select
- Chip Enable Output
- Chip Enable Input
- Output Enable
- Reset
- Battery 2 Input
- Switched Supply Output
- Power Supply Input
CC
operating range
DS1315
REV: 040203

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DS1315E Summary of contents

Page 1

DESCRIPTION The DS1315 Phantom combination of a CMOS timekeeper and a nonvolatile memory controller. In the absence of power, an external battery maintains timekeeping operation and provides power for a CMOS static RAM. The watch keeps track of ...

Page 2

... Note: An “N” located in the bottom right-hand corner of the top of the package denotes an industrial device. “xxxx” can be any combination of characters. Figure 1. Block Diagram PIN-PACKAGE TOP MARK 16 DIP DS1315 56 16 DIP DS1315 336 16 DIP DS1315 56 16 DIP DS1315 336 DS1315E 20 TSSOP 56 DS1315E 20 TSSOP 336 DS1315E 20 TSSOP xxxxx-56 DS1315E 20 TSSOP xxxx-336 DS1315E 20 TSSOP xxxx-336 DS1315E 20 TSSOP xxxxx-56 DS1315S DS1315S 16 SO 336 ...

Page 3

Operation Communication with the Time Chip is established by pattern recognition of a serial bit stream of 64 bits which must be matched by executing 64 consecutive write cycles containing the proper data on data in (D). All accesses which ...

Page 4

Figure 2. Time Chip Comparison Register Definition Note: The pattern recognition in Hex is C5, 3A, A3, 5C, C5, 3A, A3, 5C. The odds of this pattern being accidentally duplicated and causing inadvertent entry to the Phantom Time Chip are ...

Page 5

Nonvolatile Controller Operation The operation of the nonvolatile controller circuits within the Time Chip is determined by the level of the ROM/ select pin. When ROM/ RAM and performs the circuit functions required to make CMOS RAM and the timekeeping ...

Page 6

Figure 4. ROM/Time Chip Interface Time Chip Register Information Time Chip information is contained in eight registers of 8 bits, each of which is sequentially accessed 1 bit at a time after the 64-bit pattern recognition sequence has been completed. ...

Page 7

Zero Bits Registers and 6 contain 1 or more bits that will always read logic 0. When writing these locations, either a logic acceptable. Figure 5. Time Chip Register Definition 7 ...

Page 8

ABSOLUTE MAXIMUM RATINGS Voltage Range on Any Pin Relative to Ground Operating Temperature Range, Commercial Operating Temperature Range, Industrial Storage Temperature Range Soldering Temperature This is a stress rating only and functional operation of the device at these or any ...

Page 9

DC POWER DOWN ELECTRICAL CHARACTERISTICS PARAMETER Output Voltage CEO Battery BAT1 BAT2 Current Battery Backup Current @ -0.2V CCO BAT AC ELECTRICAL OPERATING CHARACTERISTICS ROM/ = GND RAM PARAMETER Read Cycle Time Access Time ...

Page 10

AC ELECTRICAL OPERATING CHARACTERISTICS ROM RAM CCO PARAMETER Read Cycle Time Access Time CEI Access Time OE to Output Low Z CEI to Output Low Output High Z CEI to Output High Z OE Address ...

Page 11

DC POWER DOWN ELECTRICAL CHARACTERISTICS PARAMETER Output Voltage CEO BAT1 BAT2 Battery Current Battery Backup Current @ -0.2 CCO BAT AC ELECTRICAL OPERATING CHARACTERISTICS ROM/ = GND RAM PARAMETER Read Cycle Time Access Time ...

Page 12

AC ELECTRICAL OPERATING CHARACTERISTICS ROM RAM CCO PARAMETER Read Cycle Time Access Time CEI Access Time OE to Output Low Z CEI to Output Low Output High Z CEI to Output High Z OE Address ...

Page 13

Figure 6. Timing Diagram: Read Cycle to Time Chip ROM/ RAM = GND Figure 7. Timing Diagram: Write Cycle to Time Chip ROM/ RAM = GND ...

Page 14

Figure 8. Timing Diagram: Read Cycle to Time Chip ROM/ RAM = V Figure 9. Timing Diagram: Write Cycle to Time Chip ROM/ RAM = CCO CCO ...

Page 15

Figure 10. Timing Diagram: Reset Pulse RST 5V DEVICE POWER-UP POWER-DOWN CHARACTERISTICS, ROM GND RAM CCO PARAMETER Recovery Time at Power-Up V Slew Rate CC Power-Down V (max (min Slew Rate CC ...

Page 16

Figure 12. 5V Power-Down Condition 3.3V DEVICE POWER-UP POWER-DOWN CHARACTERISTICS, ROM GND RAM CCO PARAMETER Recovery Time at Power-Up V Slew Rate CC Power-Down V (max (min Slew Rate CC Power-Up V ...

Page 17

NOTES: 1) All voltages are referenced to ground. 2) Measured with load shown in Figure 15. 3) Input pulse rise and fall times equal 10 ns function of the latter occurring edge of WR mode. 5) ...

Page 18

Figure 14. 3.3V Power-Down Condition Figure 15. Output Load ...

Page 19

PIN CONFIGURATIONS (continued BAT1 4 GND GND 16-Pin SO (300 mil) PACKAGE INFORMATION (The package drawing(s) in this data sheet may not reflect the most current specifications. For ...

Page 20

SO PKG 16-PIN DIM MIN A IN. 0.402 MM 10.21 B IN. 0.290 MM 7.37 C IN. 0.089 MM 2.26 E IN. 0.004 MM 0.102 F IN. 0.094 MM 2.38 G IN. 0.050 BSC MM 1.27 BSC H IN. ...

Page 21

TSSOP DIM MIN A MM — 6.25 phi 0° MAX ...

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