IDT6168SA25D Integrated Device Technology, Inc., IDT6168SA25D Datasheet

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IDT6168SA25D

Manufacturer Part Number
IDT6168SA25D
Description
CMOS static RAM
Manufacturer
Integrated Device Technology, Inc.
Datasheet

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IDT6168SA25D
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FEATURES:
• High-speed (equal access and cycle time)
• Low power consumption
• Battery backup operation—2V data retention voltage
• Available in high-density 20-pin ceramic or plastic DIP, 20-
• Produced with advanced CMOS high-performance
• CMOS process virtually eliminates alpha particle soft-error
• Bidirectional data input and output
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
nized as 4K x 4. It is fabricated using lDT’s high-performance,
high-reliability CMOS technology. This state-of-the-art tech-
nology, combined with innovative circuit design techniques,
FUNCTIONAL BLOCK DIAGRAM
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGE
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
1996 Integrated Device Technology, Inc.
— Military: 15/20/25/35/45ns (max.)
— Commercial: 15/20/25/35ns (max.)
(IDT6168LA only)
pin SOIC.
technology
rates
WE
Integrated Device Technology, Inc.
CS
The IDT6168 is a 16,384-bit high-speed static RAM orga-
I/O
I/O
I/O
I/O
0
1
2
3
A
A
11
0
DECODER
CONTROL
ADDRESS
CMOS STATIC RAM
16K (4K x 4-BIT)
INPUT
DATA
5.3
provides a cost-effective approach for high-speed memory
applications.
offers a reduced power standby mode. When
the circuit will automatically go to, and remain in, a standby
mode as long as
significant system-level power and cooling savings. The low-
power (LA) version also offers a battery backup data retention
capability where the circuit typically consumes only 1 W
operating off a 2V battery. All inputs and outputs of the
IDT6168 are TTL-compatible and operate from a single 5V
supply.
300-mil ceramic or plastic DIP, 20-pin SOIC providing high
board-level packing densities.
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
Access times as fast 15ns are available. The circuit also
Military grade product is manufactured in compliance with
The IDT6168 is packaged in either a space saving 20-pin,
MEMORY ARRAY
I/O CONTROL
16,384-BIT
CS
remains HIGH. This capability provides
IDT6168SA
IDT6168LA
CS
V
GND
CC
goes HIGH,
MAY 1996
3090 drw 01
1
3090/2

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IDT6168SA25D Summary of contents

Page 1

... I The IDT logo is a registered trademark of Integrated Device Technology, Inc. MILITARY AND COMMERCIAL TEMPERATURE RANGE 1996 Integrated Device Technology, Inc. For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391. CMOS STATIC RAM 16K (4K x 4-BIT) provides a cost-effective approach for high-speed memory applications ...

Page 2

IDT6168SA/LA CMOS STATIC RAM 16K (4K x 4-BIT) PIN CONFIGURATIONS P20- D20- & 4 SO20 ...

Page 3

IDT6168SA/LA CMOS STATIC RAM 16K (4K x 4-BIT) DC ELECTRICAL CHARACTERISTICS (V = 5.0V 10 0.2V Symbol Parameter I Operating Power Supply Current CC1 Outputs Open Max., ...

Page 4

IDT6168SA/LA CMOS STATIC RAM 16K (4K x 4-BIT) DATA RETENTION CHARACTERISTICS V = 0.2V – 0. Symbol Parameter V V for Data Retention Data Retention Current CCDR (5) t Chip Deselect ...

Page 5

IDT6168SA/LA CMOS STATIC RAM 16K (4K x 4-BIT) AC ELECTRICAL CHARACTERISTICS (CONTINUED) Symbol Parameter Read Cycle t Read Cycle Time RC t Address Access Time AA t Chip Select Access Time ACS (2) t Chip Select to Output in Low-Z ...

Page 6

IDT6168SA/LA CMOS STATIC RAM 16K (4K x 4-BIT) AC ELECTRICAL CHARACTERISTICS (CONTINUED) Symbol Parameter Write Cycle t Write Cycle Time WC t Chip Select to End-of-Write CW t Address Valid to End-of-Write AW t Address Set-up Time AS t Write ...

Page 7

IDT6168SA/LA CMOS STATIC RAM 16K (4K x 4-BIT) TIMING WAVEFORM OF WRITE CYCLE NO ADDRESS DATA IN NOTES must be HIGH during all address transitions write occurs during ...

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