S11MD5T Sharp, S11MD5T Datasheet

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S11MD5T

Manufacturer Part Number
S11MD5T
Description
High Noise-resistance Type Phototriac Coupler
Manufacturer
Sharp
Datasheet

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S11MD5T/S21MD3TV/
S21MD4TV
1. NO.5 pin completely sealed in the mold for
2. Built-in zero-cross circuit ( S21MD4TV )
3. High repetitive peak OFF-state voltage.
4. Isolation voltage between input and output
5. Recognized by UL : recognized, file No. E64380
1. For triggering of power triac
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
1 Sine wave
2 40 to 60% RH, AC for 1 minute, f = 60Hz
3 For 10 seconds
external noise resistance
( Viso : 5 000 Vrms )
Features
Applications
Model Line-ups
Absolute Maximum Ratings
Output
Input
S11MD5T V
S21MD3TV/S21MD4TV V
100V
200V
1
2
3
Peak one cycle surge current
Soldering temperature
Forward current
Reverse voltage
RMS ON-state current
Repetitive peak OFF-state voltage
Isolation voltage
Operating temperature
Storage temperature
DRM
S11MD5T
S21MD3TV/S21MD4TV
Parameter
: MIN. 400V
DRM
: MIN. 600V
Symbol
V
I
V
T
T
T
V
surge
DRM
I
I
iso
opr
stg
sol
F
T
R
S11MD5T
Outline Dimensions
S11MD5T/S21MD3TV
S21MD4TV
Anode
mark
400
Marking of S21MD3TV :
Marking of S21MD4TV :
High Noise-resistance Type
Phototriac Coupler
2.54
Zero-cross circuit ( S21MD4TV )
S11MD5T
± 0.25
7.12
6
1
- 30 to + 100
- 55 to + 125
S21MD3TV/S21MD4TV
S11MD5T/S21MD3TV/S21MD4TV
± 0.5
Rating
5 000
2
260
0.1
1.2
50
6
4
3
0.5
0.9
1.2
± 0.1
600
± 0.2
± 0.3
1 Anode
2 Cathode
3 NC
S21MD3T
S21MD4T
diagram
Internal connection
: 0 to 13 ˚
6
1
0.26
7.62
± 0.1
2
± 0.3
( Ta = 25˚C )
4 Anode/
6 Anode/
4
3
A
V
Cathode
Cathode
Unit
mA
˚C
˚C
˚C
V
A
V
rms
rms
( Unit : mm )
Zero-cross
circuit

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S11MD5T Summary of contents

Page 1

... S11MD5T/S21MD3TV/ S21MD4TV Features 1. NO.5 pin completely sealed in the mold for external noise resistance 2. Built-in zero-cross circuit ( S21MD4TV ) 3. High repetitive peak OFF-state voltage. S11MD5T V : MIN. 400V DRM S21MD3TV/S21MD4TV V 4. Isolation voltage between input and output ( Viso : 5 000 Vrms ) 5. Recognized recognized, file No. E64380 Applications 1 ...

Page 2

... Conditions I = 20mA 30mA DRM DRM 0. dV/ Rated DRM Resistance load 15mA 100 L DC500V R ISO 100 L Fig. 2 Forward Current vs 100 ( ˚ S11MD5T/S21MD3TV/S21MD4TV MIN. TYP ated - 1.3 - 1.7 0.1 1 100 - 500 - - - - - 20mA Ambient Temperature ˚C ) Ambient temperature Ta= 25˚C ) MAX. Unit 1 ...

Page 3

... Fig. 7 Holding Current vs 100mA T S21MD4TV 80 100 ( ˚ S11MD5T/S21MD3TV/S21MD4TV Ambient Temperature 100 S11MD5T 8 S21MD3TV 6 4 S21MD4TV ˚C ) Ambient temperature T a Ambient Temperature ( S11MD5T ) 1 100mA T 1.5 1.4 1.3 1.2 1.1 1 ˚C ) Ambient temperature T a Ambient Temperature S11MD5T 2 1 0.5 S21MD3TV S21MD4TV 0.2 0 ˚C ) ...

Page 4

... Fig. 8-a Repetitive Peak OFF-state Current vs. OFF-state Voltage ( S11MD5T ) 100 200 300 400 OFF-state voltage V D Fig. 9-a Repetitive Peak OFF-state Current vs. Ambient Temperature ( S11MD5T ) - Rated DRM Ambient temperature T a Fig.10 Turn-on Time vs. Forward Current ( S11MD5T/S21MD3TV ) 200 V 100 S11MD5T 50 S21MD3TV 20 10 ...

Page 5

... Please refer to the chapter “Precautions for Use.” Basic Operation Circuit Medium/High Power Triac Drive Circuit S21MD3TV S21MD4TV Note ) Please use on condition of the triac for power triggers. Zero-cross circuit is applied S11MD5T/S21MD3TV/S21MD4TV 6 Load AC100V : S11MD5T AC200V : S21MD3TV Zero- cross 4 Circuit S21MD4TV. S21MD4TV ...

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