IDT71V2558 Integrated Device Technology, Inc., IDT71V2558 Datasheet

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IDT71V2558

Manufacturer Part Number
IDT71V2558
Description
3.3V 256K x 18 ZBT Synchronous Pipelined SRAM w/2.5V I/O
Manufacturer
Integrated Device Technology, Inc.
Datasheet

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39
bit) synchronous SRAMS. They are designed to eliminate dead bus cycles
when turning the bus around between reads and writes, or writes and
reads. Thus, they have been given the name ZBT
Turnaround.
©2002 Integrated Device Technology, Inc.
128K x 36, 256K x 18 memory configurations
Supports high performance system speed - 200 MHz
(3.2 ns Clock-to-Data Access)
ZBT
cycles
Internally synchronized output buffer enable eliminates the
need to control OE
Single R/W W W W W (READ/WRITE) control pin
Positive clock-edge triggered address, data, and control
signal registers for fully pipelined applications
4-word burst capability (interleaved or linear)
Individual byte write (BW
Three chip enables for simple depth expansion
3.3V power supply (±5%), 2.5V I/O Supply (V
Optional - Boundary Scan JTAG Interface (IEEE 1149.1
complaint)
Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array (fBGA)
The IDT71V2556/58 are 3.3V high-speed 4,718,592-bit (4.5 Mega-
Address and control signals are applied to the SRAM during one clock
A
CE
OE
R/W
CEN
BW
CLK
ADV/LD
LBO
TMS
TDI
TCK
TDO
TRST
ZZ
I/O
V
V
0
DD
SS
-A
0
1
TM
1
-I/O
, V
, CE
, BW
17
DDQ
Feature - No dead cycles between write and read
31
2
, I/O
, CE
2
, BW
P1
2
3
-I/O
, BW
P4
4
Chip Enables
Output Enable
Read/Write Signal
Clock Enable
Individual Byte Write Selects
Clock
Linear / Interleaved Burst Order
JTAG Reset (Optional)
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
Address Inputs
Advance burst address / Load new address
Test Mode Select
Test Data Input
Test Clock
Test Data Output
1
- BW
4
) control (May tie active)
128K x 36, 256K x 18
3.3V Synchronous ZBT™ SRAMs
2.5V I/O, Burst Counter
Pipelined Outputs
DDQ)
TM
, or Zero Bus
1
registers. Output enable is the only asynchronous signal and can be used
to disable the outputs at any given time.
be suspended as long as necessary. All synchronous inputs are ignored
when (CEN) is high and the internal device registers will hold their previous
values.
to deselect the device when desired. If any one of these three are not
asserted when ADV/LD is low, no new memory operation can be initiated.
However, any pending data transfers (reads or writes) will be completed.
The data bus will tri-state two cycles after chip is deselected or a write is
initiated.
the IDT71V2556/58 can provide four cycles of data for a single address
presented to the SRAM. The order of the burst sequence is defined by the
LBO input pin. The LBO pin selects between linear and interleaved burst
sequence. The ADV/LD signal is used to load a new external address
(ADV/LD = LOW) or increment the internal burst counter (ADV/LD =
HIGH).
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and a 165 fine pitch ball grid array (fBGA).
cycle, and two cycles later the associated data cycle occurs, be it read
or write.
The IDT71V2556/58 contain data I/O, address and control signal
A Clock Enable (CEN) pin allows operation of the IDT71V2556/58 to
There are three chip enable pins (CE
The IDT71V2556/58 has an on-chip burst counter. In the burst mode,
The IDT71V2556/58 SRAMs utilize IDT's latest high-performance
Supply
Supply
Output
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
1
, CE
Asynchronous
Asynchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
Synchronous
IDT71V2556SA
IDT71V2558SA
Static
Static
Static
2
N/A
N/A
, CE
IDT71V2556S
IDT71V2558S
2
) that allow the user
4875 tbl 01
DSC-4875/07

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IDT71V2558 Summary of contents

Page 1

... Input Input Input Input Input Input Input Input Input Input Input Input Output Input Input I/O Supply Supply 1 IDT71V2556S IDT71V2558S IDT71V2556SA IDT71V2558SA , that allow the user Synchronous Synchronous Asynchronous Synchronous Synchronous Synchronous N/A Synchronous Static Synchronous Synchronous N/A Synchronous Asynchronous Synchronous ...

Page 2

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Symbol Pin Function I Address Inputs ADV/LD Advance / Load I R/W Read / Write I CEN Clock Enable I BW Individual Byte I - Write Enables Chip Enables Chip Enable ...

Page 3

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs LBO Address A [0:16] CE1, CE2, CE2 R/W CEN ADV/LD BWx Clock OE TMS TDI TCK TRST (optional Address D Q Control D Q Control Logic ...

Page 4

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs LBO Address A [0:17] CE1, CE2, CE2 R/W CEN ADV/LD BWx Clock OE TMS TDI TCK TRST (optional) Symbol Parameter Min. V Core Supply Voltage 3 ...

Page 5

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs (1) Grade Temperature V SS Commercial 0°C to +70°C 0V Industrial -40°C to +85°C 0V NOTES the "instant on" case temperature. A 100 DDQ I I I/O ...

Page 6

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs 100 DDQ I I DDQ DDQ DDQ NOTES: 1. Pins 14, 16 and 66 do not have to be connected directly the input voltage is V ...

Page 7

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs DDQ I DDQ I I DDQ K I DDQ DDQ DDQ I DDQ I DDQ I DDQ N I DDQ NOTES: 1. J3, J5, and R5 do not have to be directly connected and A4 are reserved for future 8M and 16M respectively. 3. These pins are NC for the " ...

Page 8

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs 1 2 CE1 I/O I I/O I I/O I I/O I ( I/O I I/O I I/O I I (2) LBO ( ( ( LBO R NC (2) NOTES: 1 ...

Page 9

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs CEN (5) R/W Chip ADV/LD Enable L L Select Select Deselect NOTES Don’t Care When ADV/LD signal is sampled high, the internal burst counter is incremented. The R/W signal is ignored when the counter is advanced. Therefore the nature of the burst cycle (Read or Write) is determined by the status of the R/W signal when the first address is loaded at the beginning of the burst cycle ...

Page 10

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs First Address Second Address Third Address (1) Fourth Address NOTE: 1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting. ...

Page 11

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Cycle Address R/W ADV NOTES defined and High Low Don’t Care High Impedance. ...

Page 12

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Cycle Address R/W ADV NOTES High Low Don’t Care High Impedance defined and Cycle Address R/W ADV/LD ...

Page 13

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Cycle Address R/W ADV NOTES High Low Don’t Care High Impedance defined and Cycle Address R/W ADV/ n+1 ...

Page 14

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Cycle Address R/W ADV NOTES High Low Don’t Care Don’t Know High Impedance defined and Device Outputs are ensured High-Z after the first rising edge of clock upon power-up. ...

Page 15

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Symbol Parameter |I | Input Leakage Current LI LBO, JTAG and ZZ Input Leakage Current | Output Leakage Current LO V Output Low Voltage OL V Output High Voltage ...

Page 16

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Symbol Parameter t Clock Cycle Time CYC (1) Clock Frequence t F (2) Clock High Pulse Width t CH (2) Clock Low Pulse Width t CL Output Parameters t Clock High to Valid Data ...

Page 17

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges 6. ...

Page 18

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges 6. ...

Page 19

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges 6. ...

Page 20

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs CEN Commercial and Industrial Temperature Ranges 6. ...

Page 21

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs CS Commercial and Industrial Temperature Ranges 6. ...

Page 22

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs TCK (1) Device Inputs / TDI/TMS (2) Device Outputs / TDO ( 3) TRST t JRST NOTES: 1. Device inputs = All device inputs except TDI, TMS and TRST. 2. Device outputs = All device outputs except TDO. ...

Page 23

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Instruction Field Revision Number (31:28) IDT Device ID (27:12) IDT JEDEC ID (11:1) ID Register Indicator Bit (Bit 0) Instruction EXTEST SAMPLE/PRELOAD DEVICE_ID HIGHZ RESERVED RESERVED ...

Page 24

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges 6.42 24 ...

Page 25

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges 6.42 25 ...

Page 26

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges 6.42 26 ...

Page 27

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs OE OE DATA OUT NOTE read operation is assumed progress. XX IDT XXXX XX Device Power Speed Type t OHZ XX X Package Process/ Temperature Range Blank I PF** ...

Page 28

... IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter, and Pipelined Outputs 6/30/99 8/23/99 Pp Pg. 6 Pg. 14 Pg. 15 Pg. 22 Pg. 24 10/4/99 Pg. 14 Pg. 15 12/31/99 04/30/00 Pg. 5,6 Pg. 6 Pg. 7 Pg. 21 05/26/00 Pg. 23 07/26/00 Pg. 5,6,7 Pg. 8 Pg. 23 10/25/00 Pg ...

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