W27C520W-90 Winbond, W27C520W-90 Datasheet

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W27C520W-90

Manufacturer Part Number
W27C520W-90
Description
64K*8 bits high speed, low power electrically erasable EPROM
Manufacturer
Winbond
Datasheet
GENERAL DESCRIPTION
The W27C520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory
organized as 65,536
data lines. To cooperate with the MCU, this device could save the external TTL component, also cost
and space. It requires only one supply in the range of 3.0V to 3.6V or 4.5V to 5.5V in normal read
mode. The W27C520 provides an electrical chip erase function. It will be a great convenient when you
need to change/update the contents in the device.
FEATURES
PIN CONFIGURATIONS
High speed access time: 70/90 nS (max.)
Read operating current: 8/20 mA (max.)
Erase/Programming operating current
30 mA (max.)
Standby current: 20/100 A (max.)
Unregulated battery power supply range,
3.0V to 3.6V and 4.5V to 5.5V
+13V erase and programming voltage
OE/VPP
OE/VPP
AD0
AD2
AD4
A15
A11
AD6
A13
GND
A15
A13
A11
A10
A12
ALE
A9
A14
V
A9
DD
64K
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
Top View
Top View
8 bits. It includes latches for the lower 8 address lines to multiplex with the 8
TSSOP
SOP
8 ELECTRICALLY ERASABLE EPROM
16
11
20
19
18
17
15
14
13
12
16
20
19
18
17
15
14
13
12
11
AD0
A8
AD1
AD3
AD5
AD7
GND
AD6
AD4
AD2
VDD
ALE
A14
A12
A10
A8
AD1
AD3
AD5
AD7
- 1 -
BLOCK DIAGRAM
PIN DESCRIPTION
High Reliability CMOS Technology
Fully static operation
All inputs and outputs directly LVTTL/CMOS
compatible
Three-state outputs
Available p
SOP
AD0 AD7
SYMBOL
2K V ESD Protection
200 mA Latchup Immunity
A8 A15
OE /V
GND
ALE
V
DD
Preliminary W27C520
AD7 - AD0
PP
A15 - A8
OE / V
ackages: 20-pin TSSOP and 20-pin
GND
Publication Release Date: October 2000
ALE
V
DD
PP
Address/Data Inputs/Outputs
Address Inputs
Address Latch Enable
Output Enable, Program/Erase
Supply Voltage
Power Supply
Ground
CONTROL
L
A
T
C
H
E
S
DECODER
DESCRIPTION
OUTPUT
BUFFER
MEMORY
ARRAY
Revision A1

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W27C520W-90 Summary of contents

Page 1

ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 8 bits. It includes latches for the lower 8 address lines to multiplex with the ...

Page 2

FUNCTIONAL DESCRIPTION Read Mode Unlike conventional UVEPROMs, which has CE and OE two control functions, the W27C520 has one OE /V and one ALE (address_latch_enable) control functions. The ALE makes lower PP address A[7: latched in the chip ...

Page 3

System Considerations An EPROM's power switching characteristics require careful device decoupling. System designers are interested in three supply current issues: standby current levels (I transient current peaks produced by the falling and rising edges of ALE Transient current magnitudes depend ...

Page 4

DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Ambient Temperature with Power Applied Storage Temperature Voltage on all Pins with Respect to Ground Except and V Pins PP, DD Voltage Pin with Respect to Ground PP ...

Page 5

CAPACITANCE (V = 3.0V to 3.6V or 4.5V to 5.5V PARAMETER Input Capacitance Output Capacitance AC CHARACTERISTICS AC Test Conditions PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load AC ...

Page 6

READ OPERATION DC CHARACTERISTICS (V = 3.0V to 3.6V or 4.5V to 5.5V PARAMETER SYM. Input Load Current I LI Output Leakage Current I LO Standby V Current (CMOS input) V Operating Current I DD ...

Page 7

DC PROGRAMMING CHARACTERISTICS (V = 6.5V 0.25V PARAMETER Input Load Current V Program Current DD V Program Current PP Input Low Voltage Input High Voltage Output Low Voltage (Verify) Output High Voltage ...

Page 8

TIMING WAVEFORMS AC Read Waveform V IH A8-A15 ALE OE/Vpp V IL High Z AD0-AD7 Programming Waveform V IH A[15: RPT 13V V IH OE/Vpp ...

Page 9

Timing Waveforms, continued Erase Waveform 1 Read Company SID V IH A[15: AD[7: 13. OE/Vpp ALE V IL Erase Waveform 2 Read Read Company Device SID SID V ...

Page 10

SMART PROGRAMMING ALGORITHM 1 Increment No Address Increment Address No Last Address ? Yes Power Down Start Address = First Location V = 6.5V DD OE/Vpp = 13V Program One 50 S Pulse Last Address ? Yes Address = First ...

Page 11

SMART PROGRAMMING ALGORITHM 2 Increment Address Preliminary W27C520 Start Address = First Location Program One 50 S Pulse OE/Vpp = 13V Increment X Yes X = 25? No Fail Verify One Byte OE/Vpp ...

Page 12

SMART ERASE ALGORITHM 1 Increment Address Preliminary W27C520 Start 6.5V DD OE/Vpp = 13V A9 = 13V; A8&A11 = V IL A10 = V IH Chip Erase 100 mS Pulse Address = First Location Increment ...

Page 13

SMART ERASE ALGORITHM 2 with Address = 2AAA(Hex) Data = 10(Hex) Increment Address Start 6.5V DD OE/Vpp = 13V Program One 50 S Pulse with Address = 5555(Hex) Data = AA(Hex) Program One 100 mS ...

Page 14

... ORDERING INFORMATION PART NO. ACCESS TIME (nS) W27C520W-70* 70 W27C520W-90* 90 W27C520S-70* 70 W27C520S-90* 90 Notes: 1. The Part No is preliminary and might be changed after project is consoled. 2. Winbond reserves the right to make changes to its products without prior notice. 3. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure ...

Page 15

PACKAGE DIMENSIONS 20-pin TSSOP 20-pin SOP Preliminary W27C520 Dimension in Inches Dimension in mm Symbol ...

Page 16

... Kowloon, Hong Kong Kowloon, Hong Kong TEL: 852-27513100 TEL: 852-27513100 FAX: 852-27552064 FAX: 852-27552064 - 16 - DESCRIPTION Winbond Electronics North America Corp. Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Microelectronics Corp. Winbond Systems Lab. Winbond Systems Lab. ...

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