IRF7104TR International Rectifier Corp., IRF7104TR Datasheet
IRF7104TR
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IRF7104TR Summary of contents
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Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon ...
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IRF7104 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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Drain-to-Source Voltage ( Fig 1. Typical Output Characteristics -V , Gate-to-Source Voltage ( Fig 3. Typical Transfer Characteristics IRF7104 -V , Drain-to-Source Voltage ( Fig 2. Typical Output Characteristics ...
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IRF7104 -V , Drain-to-Source Voltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage -V , Source-to-Drain Voltage ( Fig 7. Typical Source-Drain Diode Forward Voltage SEE FIGURE Total Gate Charge ( ...
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T , Ambient Temperature ( ° Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal ...
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IRF7104 Q G -10V Charge Fig 12a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. -3mA I G Current Sampling Resistors Fig 12b. ...
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Peak Diode Recovery dv/dt Test Circuit * D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Body ...
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IRF7104 Package Outline SO8 Outline 0.25 (.010 0.25 (.010) ...
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Tape & Reel Information SO8 Dimensions are shown in millimeters (inches TRO SIO ...