W29EE011P-15 Winbond, W29EE011P-15 Datasheet

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W29EE011P-15

Manufacturer Part Number
W29EE011P-15
Description
128K*8 CMOS flash memory
Manufacturer
Winbond
Datasheet

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GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations
Fast page-write operations
Fast chip-erase operation: 50 mS
Read access time: 90/150 nS
Page program/erase cycles: 1K/10K
Ten-year data retention
Software and hardware data protection
128 bytes per page
Page program cycle: 10 mS (max.)
Effective byte-program cycle time: 39 S
Optional software-protected data write
128K
- 1 -
8 CMOS FLASH MEMORY
Available packages: 32-pin 600 mil DIP,
TSOP, and PLCC
Low power consumption
Automatic program timing with internal V
generation
End of program detection
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Active current: 25 mA (typ.)
Standby current: 20 A (typ.)
Toggle bit
Data polling
Publication Release Date: July 1999
W29EE011
Revision A12
8 bits. The
PP
PP
is

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W29EE011P-15 Summary of contents

Page 1

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V not required. The unique cell architecture of the W29EE011 ...

Page 2

PIN CONFIGURATIONS A16 A15 NC A12 4 29 A14 5 28 A13 32-pin DIP 25 A11 ...

Page 3

FUNCTIONAL DESCRIPTION Read Mode The read operation of the W29EE011 is controlled by CE and OE, both of which have to be low for the host to obtain data from the outputs used for device selection. When CE ...

Page 4

Hardware Data Protection The integrity of the data stored in the W29EE011 is also hardware protected in the following ways: (1) Noise/Glitch Protection pulse of less than duration will not initiate a write cycle. (2) ...

Page 5

TABLE OF OPERATING MODES Operating Mode Selection Operating Range = (Ambient Temperature), V MODE CE Read V IL Write V IL Standby V IH Write Inhibit X X Output Disable X 5-Volt Software Chip Erase V ...

Page 6

Command Codes for Software Data Protection BYTE SEQUENCE TO ENABLE PROTECTION ADDRESS 0 Write 1 Write 2AAAH 2 Write 3 Write 4 Write 5 Write Sofware Data Protection Acquisition Flow (Optional page load operation) Notes for software program code: Data ...

Page 7

Command Codes for Software Chip Erase BYTE SEQUENCE 0 Write 1 Write 2 Write 3 Write 4 Write 5 Write Sofware Chip Erase Acquisition Flow Notes for software chip erase: Data Format: DQ7 DQ0 (Hex) Address Format: A14 A0 (Hex) ...

Page 8

Command Codes for Product Identification BYTE SEQUENCE SOFTWARE PRODUCT IDENTIFICATION ENTRY ADDRESS 0 Write 5555H 1 Write 2AAAH 2 Write 5555H 3 Write 5555H 4 Write 2AAAH 5 Write 5555H Software Product Identification Acquisition Flow Product Identification Entry(1) Load data ...

Page 9

DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Power Supply Voltage to V Potential ss Operating Temperature Storage Temperature D.C. Voltage on Any Pin to Ground Potential except OE Transient Voltage (< Any Pin to Ground Potential Voltage ...

Page 10

CAPACITANCE (V = 5.0V MHz PARAMETER SYMBOL I/O Pin Capacitance C I/O Input Capacitance CHARACTERISTICS AC Test Conditions ( PARAMETER Input Pulse Levels ...

Page 11

Read Cycle Timing Parameters ( 5.0 5 for 70 nS PARAMETER Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time Low to Active Output CE Low ...

Page 12

Data Polling and Toggle Bit Timing Parameters PARAMETER to Data Polling Output Delay OE to Data Polling Output Delay CE to Toggle Bit Output Delay OE to Toggle Bit Output Delay CE TIMING WAVEFORMS Read Cycle Timing Diagram Address A16-0 ...

Page 13

Timing Waveforms, continued Controlled Write Cycle Timing Diagram Address A16 OES OE WE DQ7-0 Controlled Write Cycle Timing Diagram CE Address A16 High Z DQ7 ...

Page 14

Timing Waveforms, continued Page Write Cycle Timing Diagram Address A16-0 DQ7 Byte 0 Polling Timing Diagram DATA Address A16 DQ7-0 T BLC T WPH WP Byte 1 Byte 2 T CEP T OEH ...

Page 15

Timing Waveforms, continued Toggle Bit Timing Diagram Address A16 DQ6 Page Write Timing Diagram Software Data Protection Mode Three-byte sequence for software data protection mode Address A16-0 5555 DQ6 ...

Page 16

Timing Waveforms, continued Reset Software Data Protection Timing Diagram Address A16-0 5555 DQ7 SW0 5 Volt-only Software Chip Erase Timing Diagram Address A16-0 5555 DQ7 SW0 Six-byte ...

Page 17

... ORDERING INFORMATION PART NO. ACCESS TIME (nS) W29EE011-90 90 W29EE011-15 150 W29EE011T-90 90 W29EE011T-15 150 W29EE011P-90 90 W29EE011P-15 150 W29EE01190B 90 W29EE01115B 150 W29EE011T90B 90 W29EE011T15B 150 W29EE011P90B 90 W29EE011P15B 150 Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure ...

Page 18

PACKAGE DIMENSIONS 32-pin P-DIP 32-pin PLCC Seating Plane ...

Page 19

Package Dimensions, continued 32-pin TSOP 0.10(0.004 Dimension in Inches Symbol Min. Nom. Max 0.047 __ A 0.002 0.006 1 A 0.037 0.039 0.041 2 b 0.007 0.008 ...

Page 20

... Change endurance cycles as 1K/10K Delete 70,120 nS bining 1, 17, 18 Delete SOP package Winbond Electronics (H.K.) Ltd. Winbond Electronics North America Corp. Winbond Memory Lab. Rm. 803, World Trade Square, Tower II, 123 Hoi Bun Rd., Kwun Tong, Winbond Microelectronics Corp. Kowloon, Hong Kong Winbond Systems Lab. ...

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