IRF7910 International Rectifier Corp., IRF7910 Datasheet

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IRF7910

Manufacturer Part Number
IRF7910
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Benefits
l
l
Applications
l
l
l
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Symbol
R
R
Notes  through
Symbol
V
V
I
I
I
P
P
T
D
D
DM
J
DS
GS
D
D
and Current
@ T
@ T
JL
JA
Computing and Portable Applications
, T
Power Management for Netcom,
High Frequency 3.3V and 5V input Point-
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
of-Load Synchronous Buck Converters for
Netcom and Computing Applications
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Linear Derating Factor
Gate-to-Source Voltage
are on page 8
Parameter
Parameter

GS
GS
@ 4.5V
@ 4.5V
G2
G1
S2
S1
V
12V
DSS
1
2
3
4
Top View
Typ.
–––
–––
HEXFET
15m @V
8
7
6
5
R
-55 to + 150
DS(on)
D1
D1
D2
D2
Max.
± 12
7.9
2.0
1.3
12
10
79
16
®
GS
IRF7910
max
Power MOSFET
= 4.5V
Max.
62.5
20
SO-8
10A
mW/°C
I
Units
Units
°C/W
D
°C
W
W
V
A
V
1

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IRF7910 Summary of contents

Page 1

... V DSS 12V Top View @ 4. 4.5V GS  „ „ Typ. ––– „ ––– IRF7910 ® HEXFET Power MOSFET R max I DS(on) D 15m @V = 4.5V 10A SO-8 Max. Units 12 V ± 12 ...

Page 2

... IRF7910 Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 1000 100 10 1 0.1 0.1 10 Fig 2. Typical Output Characteristics 2.0 10A 1.5 1.0 0.5 0.0 3.0 4.0 -60 -40 Fig 4. Normalized On-Resistance IRF7910 1.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 4. 100 120 140 Vs. Temperature 10 160 3 ...

Page 4

... IRF7910 10000 0V MHZ C iss = SHORTED C rss = oss = Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150°C 10 25°C 1.0 0.1 0.0 0.5 1 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7910 + - d(on) r d(off Notes: 1. Duty factor ...

Page 6

... IRF7910 0.0145 0.0140 0.0135 4.5V 0.0130 0.0125 0.0120 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50K .2 F 12V . D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit ...

Page 7

... DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENSION IS THE LENGTH OF LEAD F OR SOLDERING UBS TRATE. SO-8 Part Marking www.irf.com B H 0.25 [.010 0.10 [.004 6.46 [.255] 3X 1.27 [.050] IRF7910 INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 ...

Page 8

... IRF7910 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° ...

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