LH28F004SUT-Z1 Sharp, LH28F004SUT-Z1 Datasheet
LH28F004SUT-Z1
Related parts for LH28F004SUT-Z1
LH28F004SUT-Z1 Summary of contents
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LH28F004SU-Z1 FEATURES • 512K × 8 Word Configuration • Write/Erase Operation ( – No Requirement for DC/DC Converter to Write/Erase • 100 ns Maximum Access Time • 32 Independently Lockable Blocks (16K) • 100,000 Erase Cycles ...
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LH28F004SU-Z1 OUTPUT MULTIPLEXER INPUT BUFFER Y-DECODER ADDRESS X-DECODER QUEUE LATCH ADDRESS COUNTER Figure 2. LH28F004SU-Z1 Block Diagram OUTPUT BUFFER DATA ID QUEUE REGISTER REGISTER CSR REGISTER ESRs DATA COMPARATOR ...
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Flash Memory PIN DESCRIPTION SYMBOL TYPE WORD-SELECT ADDRESSES: Select a word within one 16K block. These INPUT 0 13 addresses are latched during Data Writes. BLOCK-SELECT ADDRESSES: Select Erase blocks. ...
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... LH28F004SU-Z1 INTRODUCTION Sharp’s LH28F004SU-Z1 4M Flash Memory is a revo- lutionary architecture which enables the design of truly mobile, high performance, personal computing and com- munication products. With innovative capabilities single voltage operation and very high read/write per- formance, the LH28F004SU-Z1 is also the ideal choice for designing embedded mass storage flash memory systems ...
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Flash Memory When the device power- Protect Set/Confirm command must be written. Other- wise, all lock bits in the device remain being locked, can’t perform the Write to each block and single Block Erase. ...
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LH28F004SU-Z1 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS Bus Operations MODE RP » CE » Read Output Disable Standby Deep Power-Down Manufacturer ...
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Flash Memory LH28F008SA-Compatible Mode Command Bus Definitions COMMAND Read Array Intelligent Identifier Read Compatible Status Register Clear Status Register Word Write Alternate Word Write Block Erase/Confirm Erase Suspend/Resume ADDRESS DATA AA = Array Address AD = ...
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... Write/Erase operation to each block. There are unassigned commands not recom- mended that the customer use any command other than the valid commands specified in “Command Bus Defi- nitions” . Sharp reserved the right to redefine these codes for future functions. 4M (512K × 8) Flash Memory R ...
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Flash Memory START WRITE 40H or 10H WRITE DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR CSR FULL STATUS CHECK IF DESIRED OPERATION COMPLETE CSR FULL STATUS CHECK PROCEDURE READ CSRD (see above) 0 DATA ...
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LH28F004SU-Z1 START WRITE 20H WRITE D0H AND BLOCK ADDRESS READ COMPATIBLE STATUS REGISTER NO 0 SUSPEND CSR.7 = ERASE 1 CSR FULL STATUS CHECK IF DESIRED OPERATION COMPLETE CSR FULL STATUS CHECK PROCEDURE READ CSRD (see above) 0 ERASE CSR.4, ...
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Flash Memory START WRITE B0H READ COMPATIBLE STATUS REGISTER 0 CSR CSR.6 = ERASE COMPLETED 1 WRITE FFH READ ARRAY DATA DONE NO READING YES WRITE D0H WRITE FFH ERASE RESUMED READ ARRAY ...
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LH28F004SU-Z1 START READ COMPATIBLE STATUS REGISTER 0 CSR RESET WP READ COMPATIBLE STATUS REGISTER 0 CSR WRITE 77H WRITE D0H AND BLOCK ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) 1 CSR. ...
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Flash Memory START RESET WP (NOTE 1) ERASE BLOCK (NOTE 2) SET WP (NOTE 3) WRITE NEW DATA TO BLOCK (NOTE 4) RELOCK BLOCK (NOTE 5) OPERATION COMPLETE FLOW TO REWRITE DATA NOTES: 1. Use Reset-Write-Protect ...
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LH28F004SU-Z1 START READ COMPATIBLE STATUS REGISTER 0 CSR WRITE FBH WRITE DATA/A 10 WRITE DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) 1 CSR. ANOTHER YES 2-BYTE WRITE NO OPERATION COMPLETE Figure 9. ...
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Flash Memory START READ COMPATIBLE STATUS REGISTER 0 CSR WRITE FBH WRITE DATA/A -1 WRITE DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) 1 CSR. ANOTHER YES 2-BYTE WRITE ...
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LH28F004SU-Z1 START WRITE A7H WRITE D0H READ COMPATIBLE STATUS REGISTER NO 0 SUSPEND CSR.7 = ERASE 1 CSR FULL STATUS CHECK IF DESIRED OPERATION COMPLETE CSR FULL STATUS CHECK PROCEDURE READ CSRD (see above) 0 ERASE CSR. SUCCESSFUL ...
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Flash Memory START READ COMPATIBLE STATUS REGISTER 0 CSR WRITE 57H WRITE CONFIRM DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) CSR. OPERATION COMPLETE BUS COMMAND OPERATION Read ...
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LH28F004SU-Z1 START READ COMPATIBLE STATUS REGISTER 0 CSR WRITE 47H WRITE CONFIRM DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) CSR. OPERATION COMPLETE 18 BUS COMMAND OPERATION Read Write Reset Write Protect ...
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Flash Memory ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings* Temperature under bias ......................... 0°C to +80°C Storage temperature ......................... -65°C to +125° 5.0 V ± 0.5 V Systems CC SYMBOL PARAMETER T Operating Temperature, Commercial A ...
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LH28F004SU-Z1 Timing Nomenclature For 5.0 V systems use the standard JEDEC cross point definitions. Each timing parameter consists of 5 characters. Some common examples are defined below time (t) from CE » (E) going low (L) ...
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Flash Memory DC Characteristics V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER I Input Load Current IL I Output Leakage Current Standby Current CCS CC ...
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LH28F004SU-Z1 DC Characteristics (Continued 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER I V Read Current PPR Write Current PPW Erase Current PPE PP V Erase ...
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Flash Memory AC Characteristics - Read Only Operations V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER t Read Cycle Time AVAV » t Address Setup to OE Going ...
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LH28F004SU- POWER-UP STANDBY V IH ADDRESSES ( ( ( ( HIGH-Z OH DATA (D/ 5 ...
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Flash Memory POWER-UP AND RESET TIMINGS V POWER ( ADDRESS (A) DATA (Q) Figure 17. V SYMBOL PARAMETER t RP# Low 4.5 V MIN. ...
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LH28F004SU-Z1 AC Characteristics for WE » - Controlled Command Write Operations V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER t Write Cycle Time AVAV t V Set ...
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Flash Memory WRITE DATA-WRITE DEEP OR ERASE SETUP COMMAND POWER-DOWN V ADDRESSES (A) IH (NOTE AVAV V ADDRESSES (A) IH (NOTE AVAV ( ...
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LH28F004SU-Z1 AC Characteristics for CE » - Controlled Command Write Operations V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER t Write Cycle Time AVAV » Setup to WE ...
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Flash Memory WRITE DATA-WRITE OR ERASE DEEP SETUP COMMAND POWER-DOWN V ADDRESSES (A) IH (NOTE AVAV V ADDRESSES (A) IH (NOTE AVAV ( ...
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LH28F004SU-Z1 Erase and Byte Write Performance V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER 1 t Byte Write Time WHRH 2 t Two-Byte Serial Write Time WHRH 3 t 16KB Block Write ...
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... MAXIMUM LIMIT DIMENSIONS IN MM [INCHES] MINIMUM LIMIT ORDERING INFORMATION LH28F004SU T Device Type Package Example: LH28F004SUT-Z1 (4M (512K x 8) Flash Memory, 100 ns, 40-pin TSOP) -Z1 Speed 100 Access Time (ns) 40-pin, 1 TSOP (Type I) (TSOP040-P-1020) 4M (512K x 8) Flash Memory LH28F004SU-Z1 40 0.50 [0.020] 10.20 [0.402] TYP ...
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... Product which fails during the warranty period because of such defect (if Customer promptly reported the failure to SHARP in writing) or, (ii) if SHARP is unable to repair or replace, SHARP will refund the purchase price of the Product upon its return to SHARP . This warranty does not apply to any Product which has been subjected to misuse, abnormal service or handling, or which has been altered or modified in design or construction, or which has been serviced or repaired by anyone other than SHARP ...