IRF9540N International Rectifier Corp., IRF9540N Datasheet

Page 1

... Junction-to-Ambient JA HEXFET TO-220AB Max. @ -10V GS @ -10V GS 140 0.91 -5.0 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– 91437B IRF9540N ® Power MOSFET V = -100V DSS R = 0.117 DS(on -23A D Units -23 -16 A -76 W W/°C ± 430 mJ ...

Page 2

... IRF9540N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 - 2.0 1.5 1.0 0.5 0 -60 -40 - Junction T em perature (° Fig 4. Normalized On-Resistance IRF9540N -4 .5V 2 0µ ° rain-to-S ource V oltage ( ...

Page 4

... IRF9540N iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. ...

Page 5

... Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 150 175 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF9540N D.U. µ d(off ...

Page 6

... IRF9540N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform ...

Page 7

... Fig 14. For P-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period [ V =10V GS Current di/dt Diode Recovery dv/ Forward Drop [ ] IRF9540N + *** ...

Page 8

... IRF9540N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...